Growth of in situ doped silicon epitaxial layer by rapid thermal processing

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • S. K. Lee
  • Y. H. Ku
  • T. Y. Hsieh
  • K. H. Jung
  • D. L. Kwong
  • David Spratt

Detail(s)

Original languageEnglish
Pages (from-to)1628-1630
Journal / PublicationApplied Physics Letters
Volume57
Issue number16
Publication statusPublished - 1990
Externally publishedYes

Abstract

In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.

Citation Format(s)

Growth of in situ doped silicon epitaxial layer by rapid thermal processing. / Lee, S. K.; Ku, Y. H.; Hsieh, T. Y.; Jung, K. H.; Kwong, D. L.; Spratt, David; Chu, P.

In: Applied Physics Letters, Vol. 57, No. 16, 1990, p. 1628-1630.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal