Growth of II-VI thin films from single-source precursors based on sterically encumbered sitel ligands

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • J. Arnold
  • J. M. Walker
  • P. J. Bonasia
  • A. L. Seligson
  • E. D. Bourret

Detail(s)

Original languageEnglish
Pages (from-to)647-653
Journal / PublicationJournal of Crystal Growth
Volume124
Issue number1-4
Publication statusPublished - 1 Nov 1992
Externally publishedYes

Abstract

We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel)2 where sitel = -TeSi(SiMe3)3. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products. © 1992.

Citation Format(s)

Growth of II-VI thin films from single-source precursors based on sterically encumbered sitel ligands. / Arnold, J.; Walker, J. M.; Yu, K. M.; Bonasia, P. J.; Seligson, A. L.; Bourret, E. D.

In: Journal of Crystal Growth, Vol. 124, No. 1-4, 01.11.1992, p. 647-653.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review