Growth of II-VI thin films from single-source precursors based on sterically encumbered sitel ligands

J. Arnold; J. M. Walker; K. M. Yu; P. J. Bonasia; A. L. Seligson; E. D. Bourret

doi:10.1016/0022-0248(92)90531-M

Growth of II-VI thin films from single-source precursors based on sterically encumbered sitel ligands

J. Arnold, J. M. Walker, K. M. Yu, P. J. Bonasia, A. L. Seligson, E. D. Bourret

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

57 Citations (Scopus)

Abstract

We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel)₂ where sitel = -TeSi(SiMe₃)₃. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products. © 1992.

Original language	English
Pages (from-to)	647-653
Journal	Journal of Crystal Growth
Volume	124
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(92)90531-M
Publication status	Published - 1 Nov 1992
Externally published	Yes

Access Output

10.1016/0022-0248(92)90531-M

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{6c0d9c4802aa49c4991881d414d1736a,

title = "Growth of II-VI thin films from single-source precursors based on sterically encumbered sitel ligands",

abstract = "We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel)2 where sitel = -TeSi(SiMe3)3. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products. {\textcopyright} 1992.",

author = "J. Arnold and Walker, {J. M.} and Yu, {K. M.} and Bonasia, {P. J.} and Seligson, {A. L.} and Bourret, {E. D.}",

year = "1992",

month = nov,

day = "1",

doi = "10.1016/0022-0248(92)90531-M",

language = "English",

volume = "124",

pages = "647--653",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Growth of II-VI thin films from single-source precursors based on sterically encumbered sitel ligands

AU - Arnold, J.

AU - Walker, J. M.

AU - Yu, K. M.

AU - Bonasia, P. J.

AU - Seligson, A. L.

AU - Bourret, E. D.

PY - 1992/11/1

Y1 - 1992/11/1

N2 - We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel)2 where sitel = -TeSi(SiMe3)3. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products. © 1992.

AB - We have developed a new route to MOCVD of II-VI compounds based on the use of novel single-source precursors in which the II-VI elements are combined at the molecular level in a single covalent compound. We have prepared and fully characterized a number of new derivatives of zinc, cadmium and mercury incorporating large, sterically demanding tellurolate ligands of general formula: M(sitel)2 where sitel = -TeSi(SiMe3)3. The crystalline compounds are relatively volatile and are easily manipulated under nitrogen. Several of these compounds have been tested for their suitability as precursors in the MOCVD process. Clean pyrolysis reactions and deposition of thin films were achieved. The stoichiometry of the pyrolysis reaction has been determined by analysis of the reaction by-products. © 1992.

UR - http://www.scopus.com/inward/record.url?scp=0026945207&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0026945207&origin=recordpage

U2 - 10.1016/0022-0248(92)90531-M

DO - 10.1016/0022-0248(92)90531-M

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 124

SP - 647

EP - 653

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Growth of II-VI thin films from single-source precursors based on sterically encumbered sitel ligands

Abstract

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Cite this