Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

Ting-Kai Huang; Ying-Chieh Chen; Hsin-Chun Ko; Hsin-Wei Huang; Chia-Hsin Wang; Huang-Kai Lin; Fu-Rong Chen; Ji-Jung Kai; Chi-Young Lee; Hsin-Tien Chiu

doi:10.1021/la8000575

Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

Ting-Kai Huang
, Ying-Chieh Chen
, Hsin-Chun Ko
, Hsin-Wei Huang
, Chia-Hsin Wang
, Huang-Kai Lin
, Fu-Rong Chen
, Ji-Jung Kai
, Chi-Young Lee
, Hsin-Tien Chiu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

24 Citations (Scopus)

Abstract

A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl _4(aq) with Sn_(s) in the presence of CTAC _(aq) (cetyltrimethylammonium chloride) and NaNO_3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 μm. © 2008 American Chemical Society.

Original language	English
Pages (from-to)	5647-5649
Journal	Langmuir
Volume	24
Issue number	11
DOIs	https://doi.org/10.1021/la8000575
Publication status	Published - 3 Jun 2008
Externally published	Yes

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@article{04a60cb47081479db9bebcbc447db6e2,

title = "Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions",

abstract = "A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl 4(aq) with Sn(s) in the presence of CTAC (aq) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 μm. {\textcopyright} 2008 American Chemical Society.",

author = "Ting-Kai Huang and Ying-Chieh Chen and Hsin-Chun Ko and Hsin-Wei Huang and Chia-Hsin Wang and Huang-Kai Lin and Fu-Rong Chen and Ji-Jung Kai and Chi-Young Lee and Hsin-Tien Chiu",

year = "2008",

month = jun,

day = "3",

doi = "10.1021/la8000575",

language = "English",

volume = "24",

pages = "5647--5649",

journal = "Langmuir",

issn = "0743-7463",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

AU - Huang, Ting-Kai

AU - Chen, Ying-Chieh

AU - Ko, Hsin-Chun

AU - Huang, Hsin-Wei

AU - Wang, Chia-Hsin

AU - Lin, Huang-Kai

AU - Chen, Fu-Rong

AU - Kai, Ji-Jung

AU - Lee, Chi-Young

AU - Chiu, Hsin-Tien

PY - 2008/6/3

Y1 - 2008/6/3

N2 - A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl 4(aq) with Sn(s) in the presence of CTAC (aq) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 μm. © 2008 American Chemical Society.

AB - A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl 4(aq) with Sn(s) in the presence of CTAC (aq) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 μm. © 2008 American Chemical Society.

UR - https://www.scopus.com/pages/publications/45749090637

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-45749090637&origin=recordpage

U2 - 10.1021/la8000575

DO - 10.1021/la8000575

M3 - RGC 21 - Publication in refereed journal

SN - 0743-7463

VL - 24

SP - 5647

EP - 5649

JO - Langmuir

JF - Langmuir

IS - 11

ER -

Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

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