Growth mechanism of an aluminium-induced solid phase epitaxial (AI-SPE) Si0.5Ge0.5 layer using : In situ heating transmission electron microscopy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

2 Scopus Citations
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Author(s)

  • Chuan-Jung Lin
  • Chien-Chung Hsu
  • Sheng-Min Yu
  • Yu-Chun Huang
  • Sung-Yen Wei
  • Wen-Ching Sun
  • Tzer-Shen Lin

Detail(s)

Original languageEnglish
Pages (from-to)3556-3560
Journal / PublicationCrystEngComm
Volume18
Issue number20
Early online date19 Apr 2016
Publication statusPublished - 28 May 2016
Externally publishedYes

Abstract

The mechanism of growth of an epitaxial Si0.5Ge0.5 layer on a single crystalline (sc) Si (100) substrate by aluminum-induced solid phase epitaxy (AI-SPE) at a relatively low temperature (450 °C) has been revealed using in situ heating transmission electron microscopy (TEM). The analysis of the thermodynamics exactly supports the finding from in situ TEM. It evidences that the Si0.5Ge0.5 prefers to nucleate at the interface of the Al layer and the sc-Si (100) substrate due to the lowest critical thickness for nucleation. Based on the results from in situ TEM and thermodynamic analysis, the germanium (Ge) virtual substrate of the compositional gradient can be successfully prepared via a multi-run AI-SPE process at low-temperature.

Citation Format(s)

Growth mechanism of an aluminium-induced solid phase epitaxial (AI-SPE) Si0.5Ge0.5 layer using : In situ heating transmission electron microscopy. / Lin, Chuan-Jung; Hsu, Chien-Chung; Yu, Sheng-Min; Huang, Yu-Chun; Wei, Sung-Yen; Sun, Wen-Ching; Lin, Tzer-Shen; Chen, Fu-Rong.

In: CrystEngComm, Vol. 18, No. 20, 28.05.2016, p. 3556-3560.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review