Growth kinetics of planar binary diffusion couples: "Thin-film case" versus "bulk cases"

U. Gösele; K. N. Tu

doi:10.1063/1.331028

Growth kinetics of planar binary diffusion couples: "Thin-film case" versus "bulk cases"

U. Gösele, K. N. Tu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

511 Citations (Scopus)

Abstract

It is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin (thin-film case). With increasing thickness of the diffusion zones the influence of interfacial reaction barriers decreases and the simultaneous existence of diffusion-controlled growth of all equilibrium phases is expected (bulk case). Selective growth of the first and second phases and the effect of impurities are discussed with the influence of interfacial reaction barriers and with references to the known cases of silicide formation.

Original language	English
Pages (from-to)	3252-3260
Journal	Journal of Applied Physics
Volume	53
Issue number	4
DOIs	https://doi.org/10.1063/1.331028
Publication status	Published - 1982
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

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title = "Growth kinetics of planar binary diffusion couples: {"}Thin-film case{"} versus {"}bulk cases{"}",

abstract = "It is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin (thin-film case). With increasing thickness of the diffusion zones the influence of interfacial reaction barriers decreases and the simultaneous existence of diffusion-controlled growth of all equilibrium phases is expected (bulk case). Selective growth of the first and second phases and the effect of impurities are discussed with the influence of interfacial reaction barriers and with references to the known cases of silicide formation.",

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doi = "10.1063/1.331028",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Growth kinetics of planar binary diffusion couples

T2 - "Thin-film case" versus "bulk cases"

AU - Gösele, U.

AU - Tu, K. N.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 1982

Y1 - 1982

N2 - It is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin (thin-film case). With increasing thickness of the diffusion zones the influence of interfacial reaction barriers decreases and the simultaneous existence of diffusion-controlled growth of all equilibrium phases is expected (bulk case). Selective growth of the first and second phases and the effect of impurities are discussed with the influence of interfacial reaction barriers and with references to the known cases of silicide formation.

AB - It is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin (thin-film case). With increasing thickness of the diffusion zones the influence of interfacial reaction barriers decreases and the simultaneous existence of diffusion-controlled growth of all equilibrium phases is expected (bulk case). Selective growth of the first and second phases and the effect of impurities are discussed with the influence of interfacial reaction barriers and with references to the known cases of silicide formation.

UR - http://www.scopus.com/inward/record.url?scp=0020115448&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0020115448&origin=recordpage

U2 - 10.1063/1.331028

DO - 10.1063/1.331028

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 53

SP - 3252

EP - 3260

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

ER -

Growth kinetics of planar binary diffusion couples: "Thin-film case" versus "bulk cases"

Abstract

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