Growth direction and cross-sectional study of silicon nanowires

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

  • Chi-Pui Li
  • Xiu-Liang Ma
  • Ning Wang
  • Shuit-Tong Lee

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)607-609
Journal / PublicationAdvanced Materials
Volume15
Issue number7-8
Online published9 Apr 2003
Publication statusPublished - Apr 2003

Link(s)

DOI

DOI
Check@CityULib
Link to Scopus https://www.scopus.com/record/display.uri?eid=2-s2.0-0038187633&origin=recordpage
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(0f4af7bc-b434-41d0-b509-c5773ec0ca36).html

Abstract

A unique sample-preparation technique to prepare the cross-sectional samples of SiNWs for TEM examinations was developed. Using this technique, the cross-sections of SiNW were successfully prepared and studied, which revealed that the Si core was bounded by well-defined facets of low-index crystallographic planes. Moreover, statistical data to elucidate the growth directions of the SiNWs synthesized by the oxide-assisted growth (OAG) approach was obtained as well. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Publication fingerprints text

100
Silicon Material Science
100
Oxide Compound Material Science
100
Nanowire Material Science
100
Molecular Wire Biochemistry, Genetics an...
100
Cross Sectional Stu... Biochemistry, Genetics an...
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Citation Format(s)

[ RIS ] [ BibTeX ]
Growth direction and cross-sectional study of silicon nanowires. / Li, Chi-Pui; Lee, Chun-Sing; Ma, Xiu-Liang et al.
In: Advanced Materials, Vol. 15, No. 7-8, 04.2003, p. 607-609.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review