Growth direction and cross-sectional study of silicon nanowires

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Chi-Pui Li
  • Xiu-Liang Ma
  • Ning Wang
  • Shuit-Tong Lee

Detail(s)

Original languageEnglish
Pages (from-to)607-609
Journal / PublicationAdvanced Materials
Volume15
Issue number7-8
Online published9 Apr 2003
Publication statusPublished - Apr 2003

Abstract

A unique sample-preparation technique to prepare the cross-sectional samples of SiNWs for TEM examinations was developed. Using this technique, the cross-sections of SiNW were successfully prepared and studied, which revealed that the Si core was bounded by well-defined facets of low-index crystallographic planes. Moreover, statistical data to elucidate the growth directions of the SiNWs synthesized by the oxide-assisted growth (OAG) approach was obtained as well. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Citation Format(s)

Growth direction and cross-sectional study of silicon nanowires. / Li, Chi-Pui; Lee, Chun-Sing; Ma, Xiu-Liang et al.
In: Advanced Materials, Vol. 15, No. 7-8, 04.2003, p. 607-609.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review