Growth characteristics of diamond films deposited on Si and W substrates

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal

2 Scopus Citations
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Author(s)

  • Fang-Qing ZHANG
  • Ya-Fei ZHANG
  • Guang-Hua CHEN
  • Qiao-Jun GAO
  • Xiang-Liu JIANG

Detail(s)

Original languageEnglish
Pages (from-to)48-55
Journal / PublicationActa Physica Sinica (overseas Edition)
Volume2
Issue number1
Publication statusPublished - Jan 1993
Externally publishedYes

Abstract

Growth characteristics of diamond films synthesized by using a dc arc discharge plasma CVD were studied by means of XRD, SEM and reflection electron diffraction. The results showed that columnar growth of the diamond films was observed, the columns having an average diameter of about 15 μm, with sharp and regular base edges. Diamond grains grown, on the substrate were initially of uniform polygons. An interfacial transition layer of polycrystalline SiC was observed between the diamond film and Si substrate. Diamond grains grown during the early-stage on W substrate were also uniform, and an interfacial transition layer of polycrystalline WC was observed between the diamond film and the substrate. © 1993 IOP Pubilishing Ltd.

Citation Format(s)

Growth characteristics of diamond films deposited on Si and W substrates. / ZHANG, Fang-Qing; ZHANG, Wenjun; ZHANG, Ya-Fei et al.
In: Acta Physica Sinica (overseas Edition), Vol. 2, No. 1, 01.1993, p. 48-55.

Research output: Journal Publications and ReviewsRGC 22 - Publication in policy or professional journal