Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Overview

13 Scopus Citations

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Author(s)

S. V. Novikov
C. R. Staddon
C. T. Foxon
R. Broesler
M. Hawkridge
Z. Liliental-Weber
J. Denlinger
I. Demchenko
F. Luckert
P. R. Edwards
R. W. Martin
W. Walukiewicz

Detail(s)

Original language	English
Pages (from-to)	60-63
Journal / Publication	Journal of Crystal Growth
Volume	323
Issue number	1
Publication status	Published - 15 May 2011
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1016/j.jcrysgro.2010.11.064 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-79957982718&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(84534607-ac78-4540-9a60-c7ff0e84a4ef).html

Abstract

Using low temperature MBE, we have shown that it is possible to grow amorphous GaN_1-xAs_x layers with a variable As content (0

Research Area(s)

Molecular beam epitaxy, Nitrides, Semiconducting IIIV materials

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Publication fingerprints text

Alloy Material Science

Devices Material Science

Molecular Beam Epit... Material Science

Low-Temperature Engineering

Energy Conversion Engineering

Solar Energy Engineering

Band Gap Engineering

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Citation Format(s)

[ RIS ] [ BibTeX ]

Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. / Novikov, S. V.; Staddon, C. R.; Foxon, C. T. et al.
In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 60-63.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Novikov, SV, Staddon, CR, Foxon, CT, Yu, KM, Broesler, R, Hawkridge, M, Liliental-Weber, Z, Denlinger, J, Demchenko, I, Luckert, F, Edwards, PR, Martin, RW & Walukiewicz, W 2011, 'Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices', Journal of Crystal Growth, vol. 323, no. 1, pp. 60-63. https://doi.org/10.1016/j.jcrysgro.2010.11.064

Novikov, S. V., Staddon, C. R., Foxon, C. T., Yu, K. M., Broesler, R., Hawkridge, M., Liliental-Weber, Z., Denlinger, J., Demchenko, I., Luckert, F., Edwards, P. R., Martin, R. W., & Walukiewicz, W. (2011). Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. Journal of Crystal Growth, 323(1), 60-63. https://doi.org/10.1016/j.jcrysgro.2010.11.064

Novikov SV, Staddon CR, Foxon CT, Yu KM, Broesler R, Hawkridge M et al. Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. Journal of Crystal Growth. 2011 May 15;323(1):60-63. doi: 10.1016/j.jcrysgro.2010.11.064

Novikov, S. V. ; Staddon, C. R. ; Foxon, C. T. et al. / Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. In: Journal of Crystal Growth. 2011 ; Vol. 323, No. 1. pp. 60-63.