Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

10 Scopus Citations
View graph of relations

Author(s)

  • S. V. Novikov
  • C. R. Staddon
  • C. T. Foxon
  • R. Broesler
  • M. Hawkridge
  • Z. Liliental-Weber
  • J. Denlinger
  • I. Demchenko
  • F. Luckert
  • P. R. Edwards
  • R. W. Martin
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Pages (from-to)60-63
Journal / PublicationJournal of Crystal Growth
Volume323
Issue number1
Publication statusPublished - 15 May 2011
Externally publishedYes

Abstract

Using low temperature MBE, we have shown that it is possible to grow amorphous GaN1-xAsx layers with a variable As content (0

Research Area(s)

  • Molecular beam epitaxy, Nitrides, Semiconducting IIIV materials

Citation Format(s)

Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices. / Novikov, S. V.; Staddon, C. R.; Foxon, C. T.; Yu, K. M.; Broesler, R.; Hawkridge, M.; Liliental-Weber, Z.; Denlinger, J.; Demchenko, I.; Luckert, F.; Edwards, P. R.; Martin, R. W.; Walukiewicz, W.

In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 60-63.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review