Growth behavior of cubic boron nitride films in a two-step process : Changing bias voltage, gas composition, and substrate temperature

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)250-254
Journal / PublicationAdvanced Functional Materials
Volume12
Issue number4
Publication statusPublished - Apr 2002

Abstract

In the deposition of cubic boron nitride (cBN) films by DC-bias-assisted DC jet chemical vapor deposition in an Ar-N2-BF3-H2 gas system, the balance between growth and etching and its relation to the deposition conditions were investigated. A two-step process was designed to optimize the nucleation and growth separately, and a critical bias voltage for the growth of cBN after nucleation was observed. It was found that etching occured when the bias voltage was below this critical value. Under optimized conditions, the crystallinity and crystal size of the cBN films were improved during the second step. Furthermore, cBN films showing clear crystal facets were obtained.

Citation Format(s)

Growth behavior of cubic boron nitride films in a two-step process : Changing bias voltage, gas composition, and substrate temperature. / Zhang, W. J.; Matsumoto, S.; Li, Q.; Bello, I.; Lee, S. T.

In: Advanced Functional Materials, Vol. 12, No. 4, 04.2002, p. 250-254.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review