Growth behavior of cubic boron nitride films in a two-step process : Changing bias voltage, gas composition, and substrate temperature
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 250-254 |
| Journal / Publication | Advanced Functional Materials |
| Volume | 12 |
| Issue number | 4 |
| Publication status | Published - Apr 2002 |
Link(s)
Abstract
In the deposition of cubic boron nitride (cBN) films by DC-bias-assisted DC jet chemical vapor deposition in an Ar-N2-BF3-H2 gas system, the balance between growth and etching and its relation to the deposition conditions were investigated. A two-step process was designed to optimize the nucleation and growth separately, and a critical bias voltage for the growth of cBN after nucleation was observed. It was found that etching occured when the bias voltage was below this critical value. Under optimized conditions, the crystallinity and crystal size of the cBN films were improved during the second step. Furthermore, cBN films showing clear crystal facets were obtained.
Citation Format(s)
Growth behavior of cubic boron nitride films in a two-step process : Changing bias voltage, gas composition, and substrate temperature. / Zhang, W. J.; Matsumoto, S.; Li, Q. et al.
In: Advanced Functional Materials, Vol. 12, No. 4, 04.2002, p. 250-254.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
