Growth and properties of GaSbBi alloys

M. K. Rajpalke; W. M. Linhart; M. Birkett; K. M. Yu; D. O. Scanlon; J. Buckeridge; T. S. Jones; M. J. Ashwin; T. D. Veal

doi:10.1063/1.4824077

Growth and properties of GaSbBi alloys

M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, D. O. Scanlon, J. Buckeridge, T. S. Jones, M. J. Ashwin, T. D. Veal

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

92 Citations (Scopus)

Abstract

Molecular-beam epitaxy has been used to grow GaSb_1- _xBi_x alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb _0.95Bi_0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 Å change in lattice constant. © 2013 AIP Publishing LLC.

Original language	English
Article number	142106
Journal	Applied Physics Letters
Volume	103
Issue number	14
DOIs	https://doi.org/10.1063/1.4824077
Publication status	Published - 2013
Externally published	Yes

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@article{f2e57b621340464292a351f35e76c857,

title = "Growth and properties of GaSbBi alloys",

abstract = "Molecular-beam epitaxy has been used to grow GaSb1- xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 {\AA} change in lattice constant. {\textcopyright} 2013 AIP Publishing LLC.",

author = "Rajpalke, {M. K.} and Linhart, {W. M.} and M. Birkett and Yu, {K. M.} and Scanlon, {D. O.} and J. Buckeridge and Jones, {T. S.} and Ashwin, {M. J.} and Veal, {T. D.}",

year = "2013",

doi = "10.1063/1.4824077",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Growth and properties of GaSbBi alloys

AU - Rajpalke, M. K.

AU - Linhart, W. M.

AU - Birkett, M.

AU - Yu, K. M.

AU - Scanlon, D. O.

AU - Buckeridge, J.

AU - Jones, T. S.

AU - Ashwin, M. J.

AU - Veal, T. D.

PY - 2013

Y1 - 2013

N2 - Molecular-beam epitaxy has been used to grow GaSb1- xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 Å change in lattice constant. © 2013 AIP Publishing LLC.

AB - Molecular-beam epitaxy has been used to grow GaSb1- xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 Å change in lattice constant. © 2013 AIP Publishing LLC.

UR - http://www.scopus.com/inward/record.url?scp=84885640489&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84885640489&origin=recordpage

U2 - 10.1063/1.4824077

DO - 10.1063/1.4824077

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142106

ER -

Growth and properties of GaSbBi alloys

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