Growth and properties of GaSbBi alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • M. K. Rajpalke
  • W. M. Linhart
  • M. Birkett
  • D. O. Scanlon
  • J. Buckeridge
  • T. S. Jones
  • M. J. Ashwin
  • T. D. Veal

Detail(s)

Original languageEnglish
Article number142106
Journal / PublicationApplied Physics Letters
Volume103
Issue number14
Publication statusPublished - 2013
Externally publishedYes

Abstract

Molecular-beam epitaxy has been used to grow GaSb1- xBix alloys with x up to 0.05. The Bi content, lattice expansion, and film thickness were determined by Rutherford backscattering and x-ray diffraction, which also indicate high crystallinity and that >98 of the Bi atoms are substitutional. The observed Bi-induced lattice dilation is consistent with density functional theory calculations. Optical absorption measurements and valence band anticrossing modeling indicate that the room temperature band gap varies from 720 meV for GaSb to 540 meV for GaSb 0.95Bi0.05, corresponding to a reduction of 36 meV/Bi or 210 meV per 0.01 Å change in lattice constant. © 2013 AIP Publishing LLC.

Citation Format(s)

Growth and properties of GaSbBi alloys. / Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Yu, K. M.; Scanlon, D. O.; Buckeridge, J.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

In: Applied Physics Letters, Vol. 103, No. 14, 142106, 2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review