Growth and photoluminescence studies of AlN thin films with different orientation degrees

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)1785-1790
Journal / PublicationDiamond and Related Materials
Volume17
Issue number7-10
Publication statusPublished - Jul 2008

Abstract

AlN thin films with different orientation degrees, i.e., (0002) textured, (0002) textured with traces of non-(0002) components, and randomly oriented, were deposited by radio frequency magnetron sputtering. The films were comprehensively characterized using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The dependence of orientation degree on the nitrogen partial pressure during the deposition processes was revealed. Based on microstructural analysis with high-resolution transmission electron microscopy and photoluminescence measurements, the correlation between the orientation degree and photoluminescence was investigated. It was suggested that the defects induced in large-angle grain boundaries were possibly responsible for the enhanced non-band-edge emission. © 2008 Elsevier B.V. All rights reserved.

Research Area(s)

  • AlN thin films, Microstructure, Orientation degree, Photoluminescence

Citation Format(s)

Growth and photoluminescence studies of AlN thin films with different orientation degrees. / Yao, Z. Q.; Li, Y. Q.; Tang, J. X. et al.
In: Diamond and Related Materials, Vol. 17, No. 7-10, 07.2008, p. 1785-1790.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review