Growth and photoluminescence studies of AlN thin films with different orientation degrees
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
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Detail(s)
Original language | English |
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Pages (from-to) | 1785-1790 |
Journal / Publication | Diamond and Related Materials |
Volume | 17 |
Issue number | 7-10 |
Publication status | Published - Jul 2008 |
Link(s)
Abstract
AlN thin films with different orientation degrees, i.e., (0002) textured, (0002) textured with traces of non-(0002) components, and randomly oriented, were deposited by radio frequency magnetron sputtering. The films were comprehensively characterized using scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The dependence of orientation degree on the nitrogen partial pressure during the deposition processes was revealed. Based on microstructural analysis with high-resolution transmission electron microscopy and photoluminescence measurements, the correlation between the orientation degree and photoluminescence was investigated. It was suggested that the defects induced in large-angle grain boundaries were possibly responsible for the enhanced non-band-edge emission. © 2008 Elsevier B.V. All rights reserved.
Research Area(s)
- AlN thin films, Microstructure, Orientation degree, Photoluminescence
Citation Format(s)
Growth and photoluminescence studies of AlN thin films with different orientation degrees. / Yao, Z. Q.; Li, Y. Q.; Tang, J. X. et al.
In: Diamond and Related Materials, Vol. 17, No. 7-10, 07.2008, p. 1785-1790.
In: Diamond and Related Materials, Vol. 17, No. 7-10, 07.2008, p. 1785-1790.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review