Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung-Min Lin; Jian Yang; Yong-Lin Chen; Yau-Chung Liu; Kai-Min Yin; Ji-Jung Kai; Fu-Rong Chen; Li-Chyong Chen; Yang-Fang Chen; Chia-Chun Chen

doi:10.1557/PROC-776-Q2.6

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

Hung-Min Lin
, Jian Yang
, Yong-Lin Chen
, Yau-Chung Liu
, Kai-Min Yin
, Ji-Jung Kai
, Fu-Rong Chen
, Li-Chyong Chen
, Yang-Fang Chen
, Chia-Chun Chen^*

^*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

Original language	English
Title of host publication	Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing
Editors	Orlin D. Velev, Timothy J. Running, Younan Xia, Peidong Yang
Pages	23-30
DOIs	https://doi.org/10.1557/PROC-776-Q2.6
Publication status	Published - 2003
Externally published	Yes
Event	2003 Materials Research Society Spring Meeting - San Francisco, United States Duration: 21 Apr 2003 → 25 Apr 2003 https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/all-issues

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	776

Conference

Conference	2003 Materials Research Society Spring Meeting
Place	United States
City	San Francisco
Period	21/04/03 → 25/04/03
Internet address	https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/all-issues

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10.1557/PROC-776-Q2.6

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Lin, H.-M., Yang, J., Chen, Y.-L., Liu, Y.-C., Yin, K.-M., Kai, J.-J., Chen, F.-R., Chen, L.-C., Chen, Y.-F., & Chen, C.-C. (2003). Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires. In O. D. Velev, T. J. Running, Y. Xia, & P. Yang (Eds.), Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing (pp. 23-30). Article 26 (Materials Research Society Symposium Proceedings; Vol. 776). https://doi.org/10.1557/PROC-776-Q2.6

Lin, Hung-Min ; Yang, Jian ; Chen, Yong-Lin et al. / Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires. Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing. editor / Orlin D. Velev ; Timothy J. Running ; Younan Xia ; Peidong Yang. 2003. pp. 23-30 (Materials Research Society Symposium Proceedings).

@inproceedings{004b608992cf416a9c04f74addbbc9b9,

title = "Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires",

abstract = "High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.",

author = "Hung-Min Lin and Jian Yang and Yong-Lin Chen and Yau-Chung Liu and Kai-Min Yin and Ji-Jung Kai and Fu-Rong Chen and Li-Chyong Chen and Yang-Fang Chen and Chia-Chun Chen",

year = "2003",

doi = "10.1557/PROC-776-Q2.6",

language = "English",

series = "Materials Research Society Symposium Proceedings",

pages = "23--30",

editor = "Velev, \{Orlin D.\} and Running, \{Timothy J.\} and Younan Xia and Peidong Yang",

booktitle = "Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing",

note = "2003 Materials Research Society Spring Meeting ; Conference date: 21-04-2003 Through 25-04-2003",

url = "https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/all-issues",

}

Lin, H-M, Yang, J, Chen, Y-L, Liu, Y-C, Yin, K-M, Kai, J-J , Chen, F-R, Chen, L-C, Chen, Y-F & Chen, C-C 2003, Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires. in OD Velev, TJ Running, Y Xia & P Yang (eds), Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing., 26, Materials Research Society Symposium Proceedings, vol. 776, pp. 23-30, 2003 Materials Research Society Spring Meeting, San Francisco, California, United States, 21/04/03. https://doi.org/10.1557/PROC-776-Q2.6

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires. / Lin, Hung-Min; Yang, Jian; Chen, Yong-Lin et al.
Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing. ed. / Orlin D. Velev; Timothy J. Running; Younan Xia; Peidong Yang. 2003. p. 23-30 26 (Materials Research Society Symposium Proceedings; Vol. 776).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

AU - Lin, Hung-Min

AU - Yang, Jian

AU - Chen, Yong-Lin

AU - Liu, Yau-Chung

AU - Yin, Kai-Min

AU - Kai, Ji-Jung

AU - Chen, Fu-Rong

AU - Chen, Li-Chyong

AU - Chen, Yang-Fang

AU - Chen, Chia-Chun

PY - 2003

Y1 - 2003

N2 - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

AB - High-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.

UR - https://www.scopus.com/pages/publications/12144285923

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-12144285923&origin=recordpage

U2 - 10.1557/PROC-776-Q2.6

DO - 10.1557/PROC-776-Q2.6

M3 - RGC 32 - Refereed conference paper (with host publication)

T3 - Materials Research Society Symposium Proceedings

SP - 23

EP - 30

BT - Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing

A2 - Velev, Orlin D.

A2 - Running, Timothy J.

A2 - Xia, Younan

A2 - Yang, Peidong

T2 - 2003 Materials Research Society Spring Meeting

Y2 - 21 April 2003 through 25 April 2003

ER -

Lin HM, Yang J, Chen YL, Liu YC, Yin KM, Kai JJ et al. Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires. In Velev OD, Running TJ, Xia Y, Yang P, editors, Unconventional Approaches to Nanostructures with Applications in Electronics, Photonics, Information Storage and Sensing. 2003. p. 23-30. 26. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-776-Q2.6

Growth and Optical Properties of GaP, GaP@GaN and GaN@GaP Core-shell Nanowires

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