Growth and high temperature properties of Ca3Ta(Al0.9Ga0.1)3Si2O14crystals with ordered langasite structure

Kainan Xiong; Yanqing Zheng; Xiaoniu Tu; Shujun Zhang; Haikuan Kong; Erwei Shi

doi:10.1016/j.jcrysgro.2013.12.058

Growth and high temperature properties of Ca₃Ta(Al_0.9Ga_0.1)₃Si₂O₁₄crystals with ordered langasite structure

Kainan Xiong
, Yanqing Zheng
, Xiaoniu Tu
, Shujun Zhang
, Haikuan Kong
, Erwei Shi

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

26 Citations (Scopus)

Abstract

A bulk of single crystals Ca₃Ta(Al_0.9Ga_0.1)₃Si₂O₁₄(CTAGS) with ordered langasite structure in which 90% of gallium was replaced by aluminum was successfully grown by the Czochralski technique. X-ray power diffraction (XRPD) studies confirm that the CTAGS crystals possess a langasite structure. The lattice parameters are a=8.053 Å, c=4.938 Å, and V=277.36 Å³. High resolution X-ray diffraction (HRXRD) analysis demonstrates that CTAGS single crystals are free of low-angle boundaries. The piezoelectric coefficient d₁₁, dielectric constant ε₁₁/ε₀, dielectric loss electromechanical coupling factor k₁₂, mechanical quality factor Q and electric resistivity of X-cut plate of CTAGS were measured from room temperature up to 900 °C. d₁₁, ε₁₁/ε₀and s11E were found to increase from 3.99 pC/N to 5.67 pC/N, from 13.7 to 15.4 and from 7.92 pm²/N to 8.87 pm²/N, respectively. In addition, the as-growth crystal is transparent in the wavelength range of 300-3200 nm and the highest transmittance exceeds 90%. © 2014 Elsevier B.V.

Original language	English
Pages (from-to)	820-823
Journal	Journal of Crystal Growth
Volume	401
DOIs	https://doi.org/10.1016/j.jcrysgro.2013.12.058
Publication status	Published - 1 Sept 2014
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work was supported by the Knowledge Innovation Project of Chinese Academy of Sciences (Grant no. YYYJ-1117), Program of Shanghai Science and Technology Commission (Grant no. 13ZR1418400) and the National Nature Science Foundation of China (Grant no. 51002167).

Research Keywords

A1. Crystal structure
A1. X-ray diffraction
A2. Czochralski method
B1. Gallium compounds
B2. Piezoelectric materials

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@article{2b1b294788404eb28f857dcbd54323c8,

title = "Growth and high temperature properties of Ca3Ta(Al0.9Ga0.1)3Si2O14crystals with ordered langasite structure",

abstract = "A bulk of single crystals Ca3Ta(Al0.9Ga0.1)3Si2O14(CTAGS) with ordered langasite structure in which 90\% of gallium was replaced by aluminum was successfully grown by the Czochralski technique. X-ray power diffraction (XRPD) studies confirm that the CTAGS crystals possess a langasite structure. The lattice parameters are a=8.053 {\AA}, c=4.938 {\AA}, and V=277.36 {\AA}3. High resolution X-ray diffraction (HRXRD) analysis demonstrates that CTAGS single crystals are free of low-angle boundaries. The piezoelectric coefficient d11, dielectric constant ε11/ε0, dielectric loss electromechanical coupling factor k12, mechanical quality factor Q and electric resistivity of X-cut plate of CTAGS were measured from room temperature up to 900 °C. d11, ε11/ε0and s11E were found to increase from 3.99 pC/N to 5.67 pC/N, from 13.7 to 15.4 and from 7.92 pm2/N to 8.87 pm2/N, respectively. In addition, the as-growth crystal is transparent in the wavelength range of 300-3200 nm and the highest transmittance exceeds 90\%. {\textcopyright} 2014 Elsevier B.V.",

keywords = "A1. Crystal structure, A1. X-ray diffraction, A2. Czochralski method, B1. Gallium compounds, B2. Piezoelectric materials",

author = "Kainan Xiong and Yanqing Zheng and Xiaoniu Tu and Shujun Zhang and Haikuan Kong and Erwei Shi",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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doi = "10.1016/j.jcrysgro.2013.12.058",

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T1 - Growth and high temperature properties of Ca3Ta(Al0.9Ga0.1)3Si2O14crystals with ordered langasite structure

AU - Xiong, Kainan

AU - Zheng, Yanqing

AU - Tu, Xiaoniu

AU - Zhang, Shujun

AU - Kong, Haikuan

AU - Shi, Erwei

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2014/9/1

Y1 - 2014/9/1

N2 - A bulk of single crystals Ca3Ta(Al0.9Ga0.1)3Si2O14(CTAGS) with ordered langasite structure in which 90% of gallium was replaced by aluminum was successfully grown by the Czochralski technique. X-ray power diffraction (XRPD) studies confirm that the CTAGS crystals possess a langasite structure. The lattice parameters are a=8.053 Å, c=4.938 Å, and V=277.36 Å3. High resolution X-ray diffraction (HRXRD) analysis demonstrates that CTAGS single crystals are free of low-angle boundaries. The piezoelectric coefficient d11, dielectric constant ε11/ε0, dielectric loss electromechanical coupling factor k12, mechanical quality factor Q and electric resistivity of X-cut plate of CTAGS were measured from room temperature up to 900 °C. d11, ε11/ε0and s11E were found to increase from 3.99 pC/N to 5.67 pC/N, from 13.7 to 15.4 and from 7.92 pm2/N to 8.87 pm2/N, respectively. In addition, the as-growth crystal is transparent in the wavelength range of 300-3200 nm and the highest transmittance exceeds 90%. © 2014 Elsevier B.V.

AB - A bulk of single crystals Ca3Ta(Al0.9Ga0.1)3Si2O14(CTAGS) with ordered langasite structure in which 90% of gallium was replaced by aluminum was successfully grown by the Czochralski technique. X-ray power diffraction (XRPD) studies confirm that the CTAGS crystals possess a langasite structure. The lattice parameters are a=8.053 Å, c=4.938 Å, and V=277.36 Å3. High resolution X-ray diffraction (HRXRD) analysis demonstrates that CTAGS single crystals are free of low-angle boundaries. The piezoelectric coefficient d11, dielectric constant ε11/ε0, dielectric loss electromechanical coupling factor k12, mechanical quality factor Q and electric resistivity of X-cut plate of CTAGS were measured from room temperature up to 900 °C. d11, ε11/ε0and s11E were found to increase from 3.99 pC/N to 5.67 pC/N, from 13.7 to 15.4 and from 7.92 pm2/N to 8.87 pm2/N, respectively. In addition, the as-growth crystal is transparent in the wavelength range of 300-3200 nm and the highest transmittance exceeds 90%. © 2014 Elsevier B.V.

KW - A1. Crystal structure

KW - A1. X-ray diffraction

KW - A2. Czochralski method

KW - B1. Gallium compounds

KW - B2. Piezoelectric materials

UR - https://www.scopus.com/pages/publications/84906965800

UR - https://www.scopus.com/pages/publications/84906965800#tab=impact

U2 - 10.1016/j.jcrysgro.2013.12.058

DO - 10.1016/j.jcrysgro.2013.12.058

M3 - RGC 21 - Publication in refereed journal

SN - 0022-0248

VL - 401

SP - 820

EP - 823

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -