Growth and characterization of ZnSe grown by organometallic vapor phase epitaxy using diisopropyl selenide and diethyl zinc

Diisopropyl selenide (DIPSe) and diethyl zinc have been used successfully to grow ZnSe epitaxial layers on GaAs by organometallic vapor phase epitaxy (OMVPE). The epilayers have been characterized by optical microscopy, Rutherford backscattering, X-ray diffraction and photoluminescence. High quality crystalline material exhibiting good surface morphology was obtained in the temperature range 380-500°C and pressure range 30-400 Torr. At temperatures below 440°C and a total reactor pressure of 300 Torr and above, the growth process is controlled by surface reaction kinetics. As the pressure is decreased, surface reaction processes control the growth process up to 580°C. At 100 and 300 Torr, the activation energy values of the thermally activated growth process are similar to those measured using other alkyl Se sources. The crystalline quality was assessed by RBS as a function of thickness of the films. Photoluminescence spectra are analyzed in detail and the effects of sample thickness, precursor ratios and growth temperature are discussed. © 1995.