Abstract
We report the growth and characterization of the Zn1-xCdxTe1-yOy (ZnCdTeO) layers on ZnTe substrates by molecular beam epitaxy technique for the application of intermediate band solar cells. ZnCdTeO layers with a wide range of Cd and O contents of 0-0.7 and 0.005-0.02, respectively, were grown by changing Cd/(Cd+Zn) flux ratio and O radical supply. The decrease of the transition energy from valence band (VB) to E- band with increasing Cd content was observed by photoreflectance measurements and the variation was consistent with the theoretical calculations based on the band anticrossing model. The magnitude of the optical absorption near the transition energy from VB to E- band depended on the Cd content because of the change of the E- band character.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 |
| Publisher | IEEE |
| ISBN (Print) | 9781479979448 |
| DOIs | |
| Publication status | Published - 14 Dec 2015 |
| Event | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015 |
Conference
| Conference | 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 |
|---|---|
| Place | United States |
| City | New Orleans |
| Period | 14/06/15 → 19/06/15 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Research Keywords
- II-VI semiconductor materials
- intermediate band solar cells
- Photovoltaic cells
- ZnTeO
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