Graphite edge controlled registration of monolayer MoS2 crystal orientation

Chun-I. Lu; Christopher John Butler; Jing-Kai Huang; Cheng-Rong Hsing; Hung-Hsiang Yang; Yu-Hsun Chu; Chi-Hung Luo; Yung-Che Sun; Shih-Hao Hsu; Kui-Hong Ou Yang; Ching-Ming Wei; Lain-Jong Li; Minn-Tsong Lin

doi:10.1063/1.4919923

Graphite edge controlled registration of monolayer MoS₂ crystal orientation

Chun-I. Lu
, Christopher John Butler
, Jing-Kai Huang
, Cheng-Rong Hsing
, Hung-Hsiang Yang
, Yu-Hsun Chu
, Chi-Hung Luo
, Yung-Che Sun
, Shih-Hao Hsu
, Kui-Hong Ou Yang
, Ching-Ming Wei
, Lain-Jong Li
, Minn-Tsong Lin

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

38 Citations (Scopus)

28 Downloads (CityUHK Scholars)

Abstract

Transition metal dichalcogenides such as the semiconductor MoS₂ are a class of two-dimensional crystals. The surface morphology and quality of MoS₂ grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS₂ islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS₂ adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS₂ grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge. © 2015 Author(s).

Original language	English
Article number	181904
Journal	Applied Physics Letters
Volume	106
Issue number	18
DOIs	https://doi.org/10.1063/1.4919923
Publication status	Published - 4 May 2015
Externally published	Yes

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Cite this

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title = "Graphite edge controlled registration of monolayer MoS2 crystal orientation",

abstract = "Transition metal dichalcogenides such as the semiconductor MoS2 are a class of two-dimensional crystals. The surface morphology and quality of MoS2 grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moir{\'e} patterns from several triangular MoS2 islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS2 adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS2 grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge. {\textcopyright} 2015 Author(s).",

author = "Chun-I. Lu and Butler, \{Christopher John\} and Jing-Kai Huang and Cheng-Rong Hsing and Hung-Hsiang Yang and Yu-Hsun Chu and Chi-Hung Luo and Yung-Che Sun and Shih-Hao Hsu and Yang, \{Kui-Hong Ou\} and Ching-Ming Wei and Lain-Jong Li and Minn-Tsong Lin",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

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month = may,

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doi = "10.1063/1.4919923",

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TY - JOUR

T1 - Graphite edge controlled registration of monolayer MoS2 crystal orientation

AU - Lu, Chun-I.

AU - Butler, Christopher John

AU - Huang, Jing-Kai

AU - Hsing, Cheng-Rong

AU - Yang, Hung-Hsiang

AU - Chu, Yu-Hsun

AU - Luo, Chi-Hung

AU - Sun, Yung-Che

AU - Hsu, Shih-Hao

AU - Yang, Kui-Hong Ou

AU - Wei, Ching-Ming

AU - Li, Lain-Jong

AU - Lin, Minn-Tsong

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2015/5/4

Y1 - 2015/5/4

N2 - Transition metal dichalcogenides such as the semiconductor MoS2 are a class of two-dimensional crystals. The surface morphology and quality of MoS2 grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS2 islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS2 adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS2 grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge. © 2015 Author(s).

AB - Transition metal dichalcogenides such as the semiconductor MoS2 are a class of two-dimensional crystals. The surface morphology and quality of MoS2 grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS2 islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS2 adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS2 grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge. © 2015 Author(s).

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U2 - 10.1063/1.4919923

DO - 10.1063/1.4919923

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181904

ER -