Graphite edge controlled registration of monolayer MoS2 crystal orientation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Chun-I. Lu
  • Christopher John Butler
  • Cheng-Rong Hsing
  • Hung-Hsiang Yang
  • Yu-Hsun Chu
  • Chi-Hung Luo
  • Yung-Che Sun
  • Shih-Hao Hsu
  • Kui-Hong Ou Yang
  • Ching-Ming Wei
  • Lain-Jong Li
  • Minn-Tsong Lin

Detail(s)

Original languageEnglish
Article number181904
Journal / PublicationApplied Physics Letters
Volume106
Issue number18
Publication statusPublished - 4 May 2015
Externally publishedYes

Link(s)

Abstract

Transition metal dichalcogenides such as the semiconductor MoS2 are a class of two-dimensional crystals. The surface morphology and quality of MoS2 grown by chemical vapor deposition are examined using atomic force and scanning tunneling microscopy techniques. By analyzing the moiré patterns from several triangular MoS2 islands, we find that there exist at least five different superstructures and that the relative rotational angles between the MoS2 adlayer and graphite substrate lattices are typically less than 3°. We conclude that since MoS2 grows at graphite step-edges, it is the edge structure which controls the orientation of the islands, with those growing from zig-zag (or armchair) edges tending to orient with one lattice vector parallel (perpendicular) to the step-edge. © 2015 Author(s).

Research Area(s)

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

Graphite edge controlled registration of monolayer MoS2 crystal orientation. / Lu, Chun-I.; Butler, Christopher John; Huang, Jing-Kai et al.
In: Applied Physics Letters, Vol. 106, No. 18, 181904, 04.05.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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