Graphene/HgTe Quantum-Dot Photodetectors with Gate-Tunable Infrared Response

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)6701-6706
Journal / PublicationACS Applied Nano Materials
Volume2
Issue number10
Online published27 Sep 2019
Publication statusPublished - 25 Oct 2019

Abstract

Graphene-based vertical heterostructures are of great interest as emerging electronic and optoelectronic devices. Here, we report the study of photovoltaic response from graphene/HgTe quantum-dot junction. The graphene/HgTe quantum-dot junction combines the high carrier mobility of graphene and tunable infrared optical absorption of HgTe colloidal quantum dots, which offers promising route for the next-generation infrared optoelectronics. We demonstrate that both the sign and magnitude of the short-circuit photocurrents and open-circuit voltages can be controlled by the applied gate voltage, which tunes the Fermi level and the interfacial built-in potential across the junction. The interfacial energy band diagram is deduced to provide the fundamental understanding of the essential physics behind the graphene/quantum-dot film junction.

Research Area(s)

  • gate-tunable photoresponse, graphene/HgTe CQDs junction, infrared, interfacial photocarrier transport, photovoltaic detection