Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

Tae-Wook Kim; Yan Gao; Orb Acton; Hin-Lap Yip; Hong Ma; Hongzheng Chen; Alex K.-Y. Jen

doi:10.1063/1.3464292

Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

Tae-Wook Kim
, Yan Gao
, Orb Acton
, Hin-Lap Yip
, Hong Ma
, Hongzheng Chen
, Alex K.-Y. Jen^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

97 Citations (Scopus)

Abstract

Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (I_ON/I_OFF = ∼10²) for 10⁴ s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs. © 2010 American Institute of Physics.

Original language	English
Article number	023310
Journal	Applied Physics Letters
Volume	97
Issue number	2
Online published	15 Jul 2010
DOIs	https://doi.org/10.1063/1.3464292
Publication status	Published - Jul 2010
Externally published	Yes

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@article{0d694fcd190d4a8f82750356eed73ba3,

title = "Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications",

abstract = "Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION/IOFF = ∼102) for 104 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs. {\textcopyright} 2010 American Institute of Physics.",

author = "Tae-Wook Kim and Yan Gao and Orb Acton and Hin-Lap Yip and Hong Ma and Hongzheng Chen and Jen, \{Alex K.-Y.\}",

year = "2010",

month = jul,

doi = "10.1063/1.3464292",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

AU - Kim, Tae-Wook

AU - Gao, Yan

AU - Acton, Orb

AU - Yip, Hin-Lap

AU - Ma, Hong

AU - Chen, Hongzheng

AU - Jen, Alex K.-Y.

PY - 2010/7

Y1 - 2010/7

N2 - Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION/IOFF = ∼102) for 104 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs. © 2010 American Institute of Physics.

AB - Reversible switching characteristics of organic nonvolatile memory transistors (ONVMTs) using chemically synthesized graphene oxide (GO) nanosheets as a charge-trapping layer are reported. The transfer curves of GO based ONVMTs showed large gate bias dependent hysteresis with threshold voltage shifts over 20 V. After writing and erasing, stored data were well maintained showing more than two orders of ON/OFF ratio (ION/IOFF = ∼102) for 104 s. These results suggest that GO nanosheets are one potential candidate as the charge-trapping layer in ONVMTs. © 2010 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/77955152124

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77955152124&origin=recordpage

U2 - 10.1063/1.3464292

DO - 10.1063/1.3464292

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 023310

ER -

Graphene oxide nanosheets based organic field effect transistor for nonvolatile memory applications

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