TY - CHAP
T1 - GRAPHENE DEVICES FOR HIGH-FREQUENCY ELECTRONICS AND THZ TECHNOLOGY
AU - Shan, Guangcun
AU - Ma, Ruguang
AU - Zhao, Xinghai
AU - Huang, Wei
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2016/1/1
Y1 - 2016/1/1
N2 - Recent years have witnessed many exciting breakthroughs in graphene as a promising material in electronics and optoelectronics. The novel physical properties of graphene afford multiple functions of signal emitting, transmitting, modulating, and detection to be realized in one material. This chapter provides an introduction to physical properties of graphene, and then graphene high-frequency transistors are discussed and are compared to silicon and III-V transistors. The latest progresses and prospective on the circuit implementations of graphene field-effect transistors (FETs) are looked into including mixers, frequency multipliers, and inverters. These recent pioneering developments open up a route towards the integration of graphene in hybrid silicon circuits to embrace the use of monolithic electronic integrated circuits to maximize system functionality, improve service flexibility, and simplify operations.
AB - Recent years have witnessed many exciting breakthroughs in graphene as a promising material in electronics and optoelectronics. The novel physical properties of graphene afford multiple functions of signal emitting, transmitting, modulating, and detection to be realized in one material. This chapter provides an introduction to physical properties of graphene, and then graphene high-frequency transistors are discussed and are compared to silicon and III-V transistors. The latest progresses and prospective on the circuit implementations of graphene field-effect transistors (FETs) are looked into including mixers, frequency multipliers, and inverters. These recent pioneering developments open up a route towards the integration of graphene in hybrid silicon circuits to embrace the use of monolithic electronic integrated circuits to maximize system functionality, improve service flexibility, and simplify operations.
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U2 - 10.1142/9789814651998_0005
DO - 10.1142/9789814651998_0005
M3 - RGC 12 - Chapter in an edited book (Author)
SN - 9789814651998
SN - 9789814651981
SP - 167
EP - 188
BT - Flexible Electronics: From Materials to Devices
PB - World Scientific Publishing Co. Pte Ltd
ER -