Grain growth stagnation in thin films due to shear-coupled grain boundary migration

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)83-87
Journal / PublicationScripta Materialia
Online published5 Feb 2020
Publication statusPublished - 15 Apr 2020


Normal grain growth in thin films attached to a substrate has been considered. It has been shown that shear-coupled grain boundary migration results in the build-up of elastic stresses in the film. A semi-quantitative model of grain growth combining the elements of disclinations theory with the Burke-Turnbull model of normal grain growth has been proposed. It has been shown that shear-coupled grain boundary migration may lead to stagnation of normal grain growth, whereas for high coupling factor values, the grains in the film do not grow at all. Finally, the mechanisms of stress relaxation enabling some grain growth are discussed.

Research Area(s)

  • Thin films, Grain growth, Grain boundary migration, Disclinations