Grain growth in nanocrystalline SnO2 prepared by sol-gel route

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)887-893
Journal / PublicationNanostructured Materials
Volume11
Issue number7
Online published23 Sep 1999
Publication statusPublished - Oct 1999

Abstract

The isothermal grain growth of nanocrystalline SnO2, prepared by the sol-gel route was investigated at various temperatures between 500 °C and 800 °C. Grain growth data were analyzed using two different models. A conventional grain growth model for polycrystalline materials yields an extremely low activation energy of 47 kJ/mol, but large grain growth exponent n from 5 to 11. These values exceed the rational region deduced from conventional theory. An alternative model is based on the assumption that the ordering of the interface regions in nanocrystalline SnO2 occurs simultaneously with grain growth by structural relaxation. This structural relaxation model describes the grain growth kinetics satisfactorily and also yields a low activation energy of 31 kJ/mol appropriate for the rearrangement of atoms.