Grain growth by DIGM in Ni thin film under high tensile stress
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 95-101 |
| Journal / Publication | Materials Research Society Symposium - Proceedings |
| Volume | 516 |
| Publication status | Published - 1998 |
| Externally published | Yes |
Conference
| Title | Proceedings of the 1998 MRS Spring Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 13 - 16 April 1998 |
Link(s)
Abstract
Electron beam evaporated Ni thin films are found to have tensile stress of 1.2 Gpa. The stress is relieved upon heating, accompanied by grain growth. The calculated stress matches the experimental result and a mechanism of grain growth is proposed.
Bibliographic Note
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Citation Format(s)
Grain growth by DIGM in Ni thin film under high tensile stress. / Jia, Zhengyi; Pan, G. Z.; Tu, K. N.
In: Materials Research Society Symposium - Proceedings, Vol. 516, 1998, p. 95-101.
In: Materials Research Society Symposium - Proceedings, Vol. 516, 1998, p. 95-101.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
