Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

7 Scopus Citations
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Author(s)

  • Jyh-Pin Chou
  • Martin B. Plenio
  • Péter Udvarhelyi
  • Gergő Thiering
  • Mehdi Abdi
  • Adam Gali

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Detail(s)

Original languageEnglish
Article number85
Journal / Publicationnpj Quantum Information
Volume6
Online published25 Sep 2020
Publication statusPublished - 2020

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Abstract

We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (h-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab initio analysis we show that strong electron–phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of h-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.

Research Area(s)

Citation Format(s)

Giant shift upon strain on the fluorescence spectrum of VNNB color centers in h-BN. / Li, Song; Chou, Jyh-Pin; Hu, Alice; Plenio, Martin B.; Udvarhelyi, Péter; Thiering, Gergő; Abdi, Mehdi; Gali, Adam.

In: npj Quantum Information, Vol. 6, 85, 2020.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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