Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

Ko-Chun Lee; José Ramón Durán Retamal; Fei Xue; Bin Cheng; Hao-Ling Tang; Ming-Hui Chiu; Wei-Jin Hu; Chih-I Wu; Mei-Hsin Chen; Lain-Jong Li; Chen-Hsin Lien; Jr-Hau He

doi:10.1109/VLSI-TSA48913.2020.9203707

Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In₂Se₃on p⁺-Si

Ko-Chun Lee
, José Ramón Durán Retamal
, Fei Xue
, Bin Cheng
, Hao-Ling Tang
, Ming-Hui Chiu
, Wei-Jin Hu
, Chih-I Wu
, Mei-Hsin Chen
, Lain-Jong Li
, Chen-Hsin Lien
, Jr-Hau He

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Recently, the demonstration of the ferroelectricity of phase In₂Se₃(α-In₂Se₃) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of α-In₂Se₃. By forming the hetero-junction of α-In₂Se₃ with the highly degenerated p⁺–Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 × 10⁶.

Original language	English
Title of host publication	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Publisher	IEEE
Pages	88-89
ISBN (Print)	9781728142326
DOIs	https://doi.org/10.1109/VLSI-TSA48913.2020.9203707
Publication status	Published - 2020
Externally published	Yes
Event	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 - Hsinchu, Taiwan, China Duration: 10 Aug 2020 → 13 Aug 2020

Publication series

Name	International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Conference

Conference	2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020
Place	Taiwan, China
City	Hsinchu
Period	10/08/20 → 13/08/20

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10.1109/VLSI-TSA48913.2020.9203707

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Cite this

Lee, K.-C., Retamal, J. R. D., Xue, F., Cheng, B., Tang, H.-L., Chiu, M.-H., Hu, W.-J., Wu, C.-I., Chen, M.-H., Li, L.-J., Lien, C.-H., & He, J.-H. (2020). Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In₂Se₃on p⁺-Si. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 (pp. 88-89). Article 9203707 (International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA). IEEE. https://doi.org/10.1109/VLSI-TSA48913.2020.9203707

@inproceedings{4d24a38f40294ea3b36286cb404436f0,

title = "Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si",

abstract = "Recently, the demonstration of the ferroelectricity of phase In2Se3(α-In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of α-In2Se3. By forming the hetero-junction of α-In2Se3 with the highly degenerated p+–Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 × 106.",

author = "Ko-Chun Lee and Retamal, \{Jos{\'e} Ram{\'o}n Dur{\'a}n\} and Fei Xue and Bin Cheng and Hao-Ling Tang and Ming-Hui Chiu and Wei-Jin Hu and Chih-I Wu and Mei-Hsin Chen and Lain-Jong Li and Chen-Hsin Lien and Jr-Hau He",

year = "2020",

doi = "10.1109/VLSI-TSA48913.2020.9203707",

language = "English",

isbn = "9781728142326",

series = "International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

publisher = "IEEE",

pages = "88--89",

booktitle = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020",

address = "United States",

note = "2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020 ; Conference date: 10-08-2020 Through 13-08-2020",

}

Lee, K-C, Retamal, JRD, Xue, F, Cheng, B, Tang, H-L, Chiu, M-H, Hu, W-J, Wu, C-I, Chen, M-H, Li, L-J, Lien, C-H & He, J-H 2020, Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In₂Se₃on p⁺-Si. in 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020., 9203707, International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, IEEE, pp. 88-89, 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020, Hsinchu, Taiwan, China, 10/08/20. https://doi.org/10.1109/VLSI-TSA48913.2020.9203707

Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In₂Se₃on p⁺-Si. / Lee, Ko-Chun; Retamal, José Ramón Durán; Xue, Fei et al.
2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. IEEE, 2020. p. 88-89 9203707 (International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3on p+-Si

AU - Lee, Ko-Chun

AU - Retamal, José Ramón Durán

AU - Xue, Fei

AU - Cheng, Bin

AU - Tang, Hao-Ling

AU - Chiu, Ming-Hui

AU - Hu, Wei-Jin

AU - Wu, Chih-I

AU - Chen, Mei-Hsin

AU - Li, Lain-Jong

AU - Lien, Chen-Hsin

AU - He, Jr-Hau

PY - 2020

Y1 - 2020

N2 - Recently, the demonstration of the ferroelectricity of phase In2Se3(α-In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of α-In2Se3. By forming the hetero-junction of α-In2Se3 with the highly degenerated p+–Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 × 106.

AB - Recently, the demonstration of the ferroelectricity of phase In2Se3(α-In2Se3) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of α-In2Se3. By forming the hetero-junction of α-In2Se3 with the highly degenerated p+–Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of 2.3 × 106.

UR - https://www.scopus.com/pages/publications/85093697740

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85093697740&origin=recordpage

U2 - 10.1109/VLSI-TSA48913.2020.9203707

DO - 10.1109/VLSI-TSA48913.2020.9203707

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9781728142326

T3 - International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

SP - 88

EP - 89

BT - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

PB - IEEE

T2 - 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020

Y2 - 10 August 2020 through 13 August 2020

ER -

Lee KC, Retamal JRD, Xue F, Cheng B, Tang HL, Chiu MH et al. Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In₂Se₃on p⁺-Si. In 2020 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2020. IEEE. 2020. p. 88-89. 9203707. (International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA). Epub 2020 Sept 22. doi: 10.1109/VLSI-TSA48913.2020.9203707