Gettering effects of helium cavities created by high dose plasma immersion ion implantation
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
Author(s)
Related Research Unit(s)
Detail(s)
| Original language | English |
|---|---|
| Journal / Publication | IEEE International Conference on Plasma Science |
| Publication status | Published - 1996 |
Conference
| Title | 1996 IEEE International Conference on Plasma Science |
|---|---|
| Place | United States |
| City | Boston |
| Period | 3 - 5 June 1996 |
Link(s)
Abstract
A study has been conducted to form helium bubbles in silicon using high dose plasma immersion ion implantation (PIII). Results show that PIII is an excellent technique to create cavities for gettering sites, for example, on the backside of silicon wafers. The high-dose and immersion characteristics of PIII make it an ideal technique for future 300mm and 400mm silicon wafers.
Citation Format(s)
Gettering effects of helium cavities created by high dose plasma immersion ion implantation. / Min, J.; Chu, P. K.; Lu, X. et al.
In: IEEE International Conference on Plasma Science, 1996.
In: IEEE International Conference on Plasma Science, 1996.
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
