Geometry and temperature effects on the threshold voltage characteristics of silicon nanowire MOS transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

3 Scopus Citations
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Author(s)

  • Hei Wong
  • Qanqun Yu
  • Shurong Dong
  • Kuniyuki Kakushima
  • Hiroshi Iwai

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)35-39
Journal / PublicationSolid-State Electronics
Volume138
Online published11 Jul 2017
Publication statusPublished - Dec 2017

Abstract

This work reports the observations of different geometry and temperature dependencies of electrical characteristics of silicon nanowire transistors with gate length of a couple microns. Several abnormal characteristics degradations were observed. As the gate lengths as well as the source/drain doping level of the devices under investigation were well beyond the punchthrough conditions, these observed characteristic degradations should not be due to conventional short-channel effects. We ascribed these observations to the charge transport along the corners/boundaries of the nanowires. Current enhancements were observed because of the higher mobility and larger density of states at the corners where the surface states have opposite effects on these parameters. Temperature dependence of the threshold voltage shows a linear decrease as the temperature increases. This trend is ascribed to the charge states at oxide/nanowire interfaces. Corners and surfaces of nanowire thus should play an important role for ultra-short nanowire transistors and that calls for shape of nanowire optimization for device design.

Research Area(s)

  • Corner effects, Short-channel effects, Silicon nanowire, Temperature effects