Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Material Science

100
Nanowire Material Science
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Field Effect Transi... Material Science
40
Devices Material Science
20
Surface Material Science
20
Electron Mobility Material Science
20
Electrical Property Material Science
20
Carrier Concentrati... Material Science
20
III-V Semiconductor Material Science
20
Carrier Mobility Material Science

Keyphrases

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Hysteresis Characte... Keyphrases
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NWFET Keyphrases
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Instability Charact... Keyphrases
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Gate Bias Stress Keyphrases
100
GaAs Nanowires Keyphrases
100
Bias Instability Keyphrases
75
Charge Trapping Keyphrases
25
Threshold Voltage S... Keyphrases
25
Electrical Properti... Keyphrases
25
Electron Density Keyphrases
25
Device Performance Keyphrases
25
Transconductance Keyphrases
25
Electron Mobility Keyphrases
25
Surface States Keyphrases
25
Hysteresis Keyphrases
25
Transfer Characteri... Keyphrases
25
Hysteresis Effect Keyphrases
25
Rate Equations Keyphrases
25
Sweeping Keyphrases
25
Carrier Mobility Keyphrases
25
Output Current Keyphrases
25
Hysteresis Behavior Keyphrases
25
Accurate Evaluation Keyphrases
25
III-V Nanowires Keyphrases
25
Instability Effects Keyphrases
25
Trap Dynamics Keyphrases
25
Double Swept Keyphrases
25
Positive Gate Bias ... Keyphrases
25
Bias Stress Effect Keyphrases
25
Negative Gate Bias ... Keyphrases

INIS

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nanowires INIS
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instability INIS
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field effect transi... INIS
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indium arsenides INIS
100
hysteresis INIS
60
charges INIS
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traps INIS
40
devices INIS
20
dynamics INIS
20
semiconductor mater... INIS
20
evaluation INIS
20
range INIS
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investigations INIS
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surfaces INIS
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performance INIS
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voltage INIS
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simulation INIS
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electrical properti... INIS
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output INIS
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mobility INIS
20
reaction kinetics INIS
20
electron density INIS
20
electron mobility INIS
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carrier mobility INIS

Engineering

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Nanowires Engineering
100
Characteristics Engineering
100
Field-Effect Transi... Engineering
100
Gate Bias Engineering
20
Evaluation Engineering
20
Empirical Model Engineering
20
Electronics Engineering
20
Voltage Engineering
20
Density Engineering
20
Device Performance Engineering
20
Large Amount Engineering
20
Building Block Engineering
20
Surface State Engineering
20
Rate Equation Engineering
20
III-V Semiconductor Engineering
20
Hysteresis Effect Engineering
20
Carrier Mobility Engineering
20
Current Output Engineering
20
Positive Direction Engineering
Research OutputsResearch Output authored by Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors is tagged with the concept