GaN1-xBix: Extremely mismatched semiconductor alloys

A. X. Levander; K. M. Yu; S. V. Novikov; A. Tseng; C. T. Foxon; O. D. Dubon; J. Wu; W. Walukiewicz

doi:10.1063/1.3499753

GaN_1-xBi_x: Extremely mismatched semiconductor alloys

A. X. Levander
, K. M. Yu^*
, S. V. Novikov
, A. Tseng
, C. T. Foxon
, O. D. Dubon
, J. Wu
, W. Walukiewicz

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

35 Citations (Scopus)

Abstract

Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN_1-xBi_x alloys on sapphire substrates with x up to 0.11. The GaN_1-xBi_x alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x∼0.11 was qualitatively explained by formation of a narrow band originating from anticrossing interaction between Bi localized states and the extended states of the GaN matrix. © 2010 American Institute of Physics.

Original language	English
Article number	141919
Journal	Applied Physics Letters
Volume	97
Issue number	14
DOIs	https://doi.org/10.1063/1.3499753
Publication status	Published - 4 Oct 2010
Externally published	Yes

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@article{1ffc151769c0455b93f228c017c504ad,

title = "GaN1-xBix: Extremely mismatched semiconductor alloys",

abstract = "Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN1-xBix alloys on sapphire substrates with x up to 0.11. The GaN1-xBix alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x∼0.11 was qualitatively explained by formation of a narrow band originating from anticrossing interaction between Bi localized states and the extended states of the GaN matrix. {\textcopyright} 2010 American Institute of Physics.",

author = "Levander, \{A. X.\} and Yu, \{K. M.\} and Novikov, \{S. V.\} and A. Tseng and Foxon, \{C. T.\} and Dubon, \{O. D.\} and J. Wu and W. Walukiewicz",

year = "2010",

month = oct,

day = "4",

doi = "10.1063/1.3499753",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - GaN1-xBix

T2 - Extremely mismatched semiconductor alloys

AU - Levander, A. X.

AU - Yu, K. M.

AU - Novikov, S. V.

AU - Tseng, A.

AU - Foxon, C. T.

AU - Dubon, O. D.

AU - Wu, J.

AU - Walukiewicz, W.

PY - 2010/10/4

Y1 - 2010/10/4

N2 - Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN1-xBix alloys on sapphire substrates with x up to 0.11. The GaN1-xBix alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x∼0.11 was qualitatively explained by formation of a narrow band originating from anticrossing interaction between Bi localized states and the extended states of the GaN matrix. © 2010 American Institute of Physics.

AB - Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN1-xBix alloys on sapphire substrates with x up to 0.11. The GaN1-xBix alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x∼0.11 was qualitatively explained by formation of a narrow band originating from anticrossing interaction between Bi localized states and the extended states of the GaN matrix. © 2010 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/77958042438

UR - https://www.scopus.com/pages/publications/77958042438#tab=impact

U2 - 10.1063/1.3499753

DO - 10.1063/1.3499753

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141919

ER -