兩步化學氣相沉積法生長稀氮化GaNSb納米線

Research output: Patents, Agreements and Assignments › RGC 51 - Patents (CityUHK)

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Author(s)

Related Research Unit(s)

Detail(s)

Original languageChinese (Traditional)
Patent numberZL202011291234.8
Filing number202011291234.8
Publication status
  • Accepted/In press/Filed - 18 Nov 2020
  • Published - 25 Jul 2023

Link(s)

Check@CityULib
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(569fd3bc-15a0-41aa-b0e2-fd39f18535b2).html

Citation Format(s)

[ RIS ] [ BibTeX ]
兩步化學氣相沉積法生長稀氮化GaNSb納米線. / HO, Johnny Chung Yin (Inventor); WANG, Wei (Inventor); YIP, Sen Po (Inventor).
Patent No.: ZL202011291234.8. Jul 25, 2023.

Research output: Patents, Agreements and Assignments › RGC 51 - Patents (CityUHK)