兩步化學氣相沉積法生長稀氮化GaNSb納米線

Research output: Patents, Agreements and Assignments (RGC: 51, 52, 53) › 51_Patents granted (CityU only, data source from KTO)

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Author(s)

Related Research Unit(s)

Detail(s)

Original languageChinese (Traditional)
Filing number202011291234.8
Publication status
  • Accepted/In press/Filed - 18 Nov 2020

Link(s)

Check@CityULib
Permanent Link https://scholars.cityu.edu.hk/en/publications/publication(569fd3bc-15a0-41aa-b0e2-fd39f18535b2).html

Citation Format(s)

[ RIS ] [ BibTeX ]

兩步化學氣相沉積法生長稀氮化GaNSb納米線. / HO, Johnny Chung Yin (Inventor); WANG, Wei (Inventor); YIP, Sen Po (Inventor).

Nov 18, 2020.

Research output: Patents, Agreements and Assignments (RGC: 51, 52, 53) › 51_Patents granted (CityU only, data source from KTO)