GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management

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Original languageEnglish
Article number6914566
Pages (from-to)1277-1283
Journal / PublicationIEEE Transactions on Industry Applications
Issue number2
Online published1 Oct 2014
Publication statusPublished - Mar 2015
Externally publishedYes


Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques.

Research Area(s)

  • GaN, light-emitting diode (LED), multiple quantum well (MQW), nanostructure