GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 6914566 |
Pages (from-to) | 1277-1283 |
Journal / Publication | IEEE Transactions on Industry Applications |
Volume | 51 |
Issue number | 2 |
Online published | 1 Oct 2014 |
Publication status | Published - Mar 2015 |
Externally published | Yes |
Link(s)
Abstract
Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques.
Research Area(s)
- GaN, light-emitting diode (LED), multiple quantum well (MQW), nanostructure
Citation Format(s)
GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management. / Hsiao, Yu-Hsuan; Tsai, Meng-Lin; He, Jr-Hau.
In: IEEE Transactions on Industry Applications, Vol. 51, No. 2, 6914566, 03.2015, p. 1277-1283.
In: IEEE Transactions on Industry Applications, Vol. 51, No. 2, 6914566, 03.2015, p. 1277-1283.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review