GaNAsP : An intermediate band semiconductor grown by gas-source molecular beam epitaxy

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Y. J. Kuang
  • R. Kudrawiec
  • A. V. Luce
  • M. Ting
  • W. Walukiewicz
  • C. W. Tu

Detail(s)

Original languageEnglish
Article number112105
Journal / PublicationApplied Physics Letters
Volume102
Issue number11
Publication statusPublished - 18 Mar 2013
Externally publishedYes

Abstract

Dilute nitride GaNAsP thin films were grown via a GaAsP metamorphic buffer on GaP(100) substrate with gas-source molecular beam epitaxy. The compositions of this III-V-V-V compound were determined by channeling Rutherford backscattering spectroscopy and nuclear reaction analysis. Photoreflectance shows two distinctive transitions from the valence band to the split conduction bands due to N incorporation. Photoluminescence and optical absorption show the fundamental bandgap of Ga(N)AsP is largely tailored by the small amount of N. The observed multiband characteristics and the bandgap tunability of GaNAsP are two merits that fit into the intermediate-band solar cell roadmap, and GaNAsP of high crystal quality provides a strong candidate for intermediate band solar cell materials. © 2013 American Institute of Physics.

Citation Format(s)

GaNAsP : An intermediate band semiconductor grown by gas-source molecular beam epitaxy. / Kuang, Y. J.; Yu, K. M.; Kudrawiec, R.; Luce, A. V.; Ting, M.; Walukiewicz, W.; Tu, C. W.

In: Applied Physics Letters, Vol. 102, No. 11, 112105, 18.03.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review