GaN1-xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

13 Scopus Citations
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Author(s)

  • W. L. Sarney
  • S. P. Svensson
  • S. V. Novikov
  • W. Walukiewicz
  • C. T. Foxon

Detail(s)

Original languageEnglish
Pages (from-to)95-99
Journal / PublicationJournal of Crystal Growth
Volume383
Publication statusPublished - 2013
Externally publishedYes

Abstract

The electronic structure of the conduction and valence bands of highly mismatched alloys (HMAs) such as GaN1-xSbx are well described by the band anticrossing model. The properties of this alloy, which has a large band gap range and controllable valence band positions, make it a candidate material for efficient solar energy conversion devices. We have examined the growth and structural properties of amorphous and crystalline GaN1-xSbx. These HMAs were grown by low temperature molecular beam epitaxy (MBE) under Ga-rich conditions. While there is a monotonic linear increase of Sb incorporation with Sb overpressure, there was no obvious dependence of Sb incorporation with growth temperature for the range of 10-470 C. At growth temperatures lower than 100 C, GaN1-xSb x HMAs lose crystallinity and become amorphous for Sb compositions at or exceeding ∼5%. Ga-rich growth resulted in strong absorption at energies as low as 1 eV for GaN1-xSbx alloys of all compositions. The strong low energy absorption may arise from a Ga-related defect band. © Published by Elsevier B.V.

Research Area(s)

  • A1. Crystal structure, A3. Molecular beam epitaxy, A3. Semiconducting III-V materials, B1. Nitrides

Citation Format(s)

GaN1-xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions. / Sarney, W. L.; Svensson, S. P.; Novikov, S. V.; Yu, K. M.; Walukiewicz, W.; Foxon, C. T.

In: Journal of Crystal Growth, Vol. 383, 2013, p. 95-99.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review