GaN1-xBix : Extremely mismatched semiconductor alloys

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • A. X. Levander
  • S. V. Novikov
  • A. Tseng
  • C. T. Foxon
  • O. D. Dubon
  • J. Wu
  • W. Walukiewicz

Detail(s)

Original languageEnglish
Article number141919
Journal / PublicationApplied Physics Letters
Volume97
Issue number14
Publication statusPublished - 4 Oct 2010
Externally publishedYes

Abstract

Through nonequilibrium low-temperature molecular beam epitaxy, we have grown GaN1-xBix alloys on sapphire substrates with x up to 0.11. The GaN1-xBix alloys are found to be amorphous with GaN crystals distributed throughout the film. A dramatic reduction in the optical band gap from 3.4 eV in GaN to as low as 1.2 eV for x∼0.11 was qualitatively explained by formation of a narrow band originating from anticrossing interaction between Bi localized states and the extended states of the GaN matrix. © 2010 American Institute of Physics.

Citation Format(s)

GaN1-xBix: Extremely mismatched semiconductor alloys. / Levander, A. X.; Yu, K. M.; Novikov, S. V. et al.
In: Applied Physics Letters, Vol. 97, No. 14, 141919, 04.10.2010.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review