TY - JOUR
T1 - GaN-on-Si HEMTs Fabricated with Si CMOS-Compatible Metallization for Power Amplifiers in Low-Power Mobile SoCs
AU - Xie, Hanlin
AU - Liu, Zhihong
AU - Hu, Wenrui
AU - Zhong, Zheng
AU - Lee, Kenneth
AU - Guo, Yong-Xin
AU - Ng, Geok Ing
PY - 2021/2
Y1 - 2021/2
N2 - GaN-on-Si high electron mobility transistors (HEMTs) were fabricated using Si CMOS-compatible metallization scheme for RF power amplifiers (PAs)in 5G low-power mobile system-on-chips (SoCs). Ta/Al metals were adopted for the ohmic contact formation. The device with 80-nm rectangular gate exhibited a drain current (Idmax) of 1.95 A/mm, a peak transconductance (gm) of 471 mS/mm, a cutoff frequency (fT) of 178 GHz, and a maximum oscillation frequency (fmax) of 74 GHz. At a mobile SoC-compatible supply voltage of Vd = 5 V, the device shows a peak power-added efficiency (PAE) of 51.4%/47.6%, a maximum output power density (Poutmax) of 1.12 W/mm/1.06 W/mm, and a gain of 16 dB/16 dB at frequency of 3.5 GHz/5 GHz, respectively. These results indicate the great potential of the GaN-on-Si HEMTs for high-performance and low-cost RF PAs for 5G mobile SoC applications. © 2001-2012 IEEE.
AB - GaN-on-Si high electron mobility transistors (HEMTs) were fabricated using Si CMOS-compatible metallization scheme for RF power amplifiers (PAs)in 5G low-power mobile system-on-chips (SoCs). Ta/Al metals were adopted for the ohmic contact formation. The device with 80-nm rectangular gate exhibited a drain current (Idmax) of 1.95 A/mm, a peak transconductance (gm) of 471 mS/mm, a cutoff frequency (fT) of 178 GHz, and a maximum oscillation frequency (fmax) of 74 GHz. At a mobile SoC-compatible supply voltage of Vd = 5 V, the device shows a peak power-added efficiency (PAE) of 51.4%/47.6%, a maximum output power density (Poutmax) of 1.12 W/mm/1.06 W/mm, and a gain of 16 dB/16 dB at frequency of 3.5 GHz/5 GHz, respectively. These results indicate the great potential of the GaN-on-Si HEMTs for high-performance and low-cost RF PAs for 5G mobile SoC applications. © 2001-2012 IEEE.
KW - 5G
KW - GaN-on-Si
KW - high electron mobility transistor (HEMT)
KW - mobile system-on-chip (SoC)
KW - RF
UR - http://www.scopus.com/inward/record.url?scp=85096835597&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85096835597&origin=recordpage
U2 - 10.1109/LMWC.2020.3036389
DO - 10.1109/LMWC.2020.3036389
M3 - RGC 21 - Publication in refereed journal
SN - 1531-1309
VL - 31
SP - 141
EP - 144
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 2
M1 - 9261624
ER -