TY - JOUR
T1 - GaN-Based Multiple-Quantum-Well Light-Emitting Diodes Employing Nanotechnology for Photon Management
AU - Hsiao, Yu-Hsuan
AU - Tsai, Meng-Lin
AU - He, Jr-Hau
PY - 2015/3
Y1 - 2015/3
N2 - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques.
AB - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white-light devices. In this paper, we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced, as well as the fabrication techniques.
KW - GaN
KW - light-emitting diode (LED)
KW - multiple quantum well (MQW)
KW - nanostructure
UR - http://www.scopus.com/inward/record.url?scp=84926387907&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84926387907&origin=recordpage
U2 - 10.1109/TIA.2014.2360984
DO - 10.1109/TIA.2014.2360984
M3 - RGC 21 - Publication in refereed journal
SN - 0093-9994
VL - 51
SP - 1277
EP - 1283
JO - IEEE Transactions on Industry Applications
JF - IEEE Transactions on Industry Applications
IS - 2
M1 - 6914566
ER -