GaN-Based Multiple Quantum Well Light-Emitting-Diodes Employing Nanotechnology for Photon Management

Yu-Hsuan Hsiao, Meng-Lin Tsai, Jr-Hau He*

*Corresponding author for this work

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

Abstract

Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.
Original languageEnglish
Title of host publication2013 IEEE Industry Applications Society Annual Meeting (IAS)
PublisherIEEE
ISBN (Electronic)978-1-4673-5202-4
DOIs
Publication statusPublished - Oct 2013
Externally publishedYes
EventIAS Annual Meeting (IAS 2013) - Hilton Orlando Lake Buena Vista, Lake Buena Vista, United States
Duration: 6 Oct 201311 Oct 2013

Publication series

NameConference Record of the IEEE Industry Applications Society Annual Meeting (IAS)
PublisherIEEE
ISSN (Print)0197-2618

Conference

ConferenceIAS Annual Meeting (IAS 2013)
Country/TerritoryUnited States
CityLake Buena Vista
Period6/10/1311/10/13

Research Keywords

  • GaN
  • Light emitting diode
  • multiple quantum well
  • nanostructure

Fingerprint

Dive into the research topics of 'GaN-Based Multiple Quantum Well Light-Emitting-Diodes Employing Nanotechnology for Photon Management'. Together they form a unique fingerprint.

Cite this