TY - GEN
T1 - GaN-Based Multiple Quantum Well Light-Emitting-Diodes Employing Nanotechnology for Photon Management
AU - Hsiao, Yu-Hsuan
AU - Tsai, Meng-Lin
AU - He, Jr-Hau
PY - 2013/10
Y1 - 2013/10
N2 - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.
AB - Nanostructures have been proved to be an efficient way of modifying/improving the performance of GaN-based light-emitting-diodes (LEDs). The achievements in photon management include strain relaxation, light extraction enhancement, radiation pattern control, and white light devices. In this review we discuss the impact and the underlying physics of applying nanotechnology on LEDs. A variety of nanostructures are introduced as well as the fabrication techniques.
KW - GaN
KW - Light emitting diode
KW - multiple quantum well
KW - nanostructure
UR - http://www.scopus.com/inward/record.url?scp=84893421612&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84893421612&origin=recordpage
U2 - 10.1109/IAS.2013.6682537
DO - 10.1109/IAS.2013.6682537
M3 - RGC 32 - Refereed conference paper (with host publication)
T3 - Conference Record of the IEEE Industry Applications Society Annual Meeting (IAS)
BT - 2013 IEEE Industry Applications Society Annual Meeting (IAS)
PB - IEEE
T2 - IAS Annual Meeting (IAS 2013)
Y2 - 6 October 2013 through 11 October 2013
ER -