Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

Chi Cun Kuo; I Chieh Chen; Chih Cheng Shih; Kuan Chang Chang; Chao Hsien Huang; Po Hsun Chen; Ting-Chang Chang; Tsung Ming Tsai; Jing Shuen Chang; J. C. Huang

doi:10.1109/LED.2015.2496303

Author(s)

Chi Cun Kuo
I Chieh Chen
Chih Cheng Shih
Kuan Chang Chang
Chao Hsien Huang
Po Hsun Chen
Ting-Chang Chang
Tsung Ming Tsai
Jing Shuen Chang

Detail(s)

Original language	English
Article number	7312919
Pages (from-to)	1321-1324
Journal / Publication	IEEE Electron Device Letters
Volume	36
Issue number	12
Online published	30 Oct 2015
Publication status	Published - Dec 2015
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1109/LED.2015.2496303 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84959462914&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(9d8467f5-f51c-4e76-9e75-f30c7751a9b4).html

Abstract

We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduced, and the switching speed will be improved due to the galvanic effect. We demonstrate the galvanic effect of Au-Ag electrode by two different metal composition ratios through the material and electrical analyses.

Research Area(s)

Ag-Au electrode, Galvanic effect, RRAM

Citation Format(s)

[ RIS ] [ BibTeX ]

Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory. / Kuo, Chi Cun; Chen, I Chieh; Shih, Chih Cheng et al.
In: IEEE Electron Device Letters, Vol. 36, No. 12, 7312919, 12.2015, p. 1321-1324.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Kuo, CC, Chen, IC, Shih, CC, Chang, KC, Huang, CH, Chen, PH, Chang, T-C, Tsai, TM, Chang, JS & Huang, JC 2015, 'Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory', IEEE Electron Device Letters, vol. 36, no. 12, 7312919, pp. 1321-1324. https://doi.org/10.1109/LED.2015.2496303

Kuo, C. C., Chen, I. C., Shih, C. C., Chang, K. C., Huang, C. H., Chen, P. H., Chang, T.-C., Tsai, T. M., Chang, J. S., & Huang, J. C. (2015). Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory. IEEE Electron Device Letters, 36(12), 1321-1324. Article 7312919. https://doi.org/10.1109/LED.2015.2496303

Kuo CC, Chen IC, Shih CC, Chang KC, Huang CH, Chen PH et al. Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory. IEEE Electron Device Letters. 2015 Dec;36(12):1321-1324. 7312919. Epub 2015 Oct 30. doi: 10.1109/LED.2015.2496303

Kuo, Chi Cun ; Chen, I Chieh ; Shih, Chih Cheng et al. / Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory. In: IEEE Electron Device Letters. 2015 ; Vol. 36, No. 12. pp. 1321-1324.