Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

Chi Cun Kuo; I Chieh Chen; Chih Cheng Shih; Kuan Chang Chang; Chao Hsien Huang; Po Hsun Chen; Ting-Chang Chang; Tsung Ming Tsai; Jing Shuen Chang; J. C. Huang

doi:10.1109/LED.2015.2496303

Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

Chi Cun Kuo
, I Chieh Chen
, Chih Cheng Shih
, Kuan Chang Chang
, Chao Hsien Huang
, Po Hsun Chen
, Ting-Chang Chang^*
, Tsung Ming Tsai
, Jing Shuen Chang
, J. C. Huang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

34 Citations (Scopus)

Abstract

We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduced, and the switching speed will be improved due to the galvanic effect. We demonstrate the galvanic effect of Au-Ag electrode by two different metal composition ratios through the material and electrical analyses.

Original language	English
Article number	7312919
Pages (from-to)	1321-1324
Journal	IEEE Electron Device Letters
Volume	36
Issue number	12
Online published	30 Oct 2015
DOIs	https://doi.org/10.1109/LED.2015.2496303
Publication status	Published - Dec 2015
Externally published	Yes

Research Keywords

Ag-Au electrode
Galvanic effect
RRAM

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10.1109/LED.2015.2496303

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title = "Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory",

abstract = "We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduced, and the switching speed will be improved due to the galvanic effect. We demonstrate the galvanic effect of Au-Ag electrode by two different metal composition ratios through the material and electrical analyses.",

keywords = "Ag-Au electrode, Galvanic effect, RRAM",

author = "Kuo, \{Chi Cun\} and Chen, \{I Chieh\} and Shih, \{Chih Cheng\} and Chang, \{Kuan Chang\} and Huang, \{Chao Hsien\} and Chen, \{Po Hsun\} and Ting-Chang Chang and Tsai, \{Tsung Ming\} and Chang, \{Jing Shuen\} and Huang, \{J. C.\}",

year = "2015",

month = dec,

doi = "10.1109/LED.2015.2496303",

language = "English",

volume = "36",

pages = "1321--1324",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

number = "12",

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TY - JOUR

T1 - Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

AU - Kuo, Chi Cun

AU - Chen, I Chieh

AU - Shih, Chih Cheng

AU - Chang, Kuan Chang

AU - Huang, Chao Hsien

AU - Chen, Po Hsun

AU - Chang, Ting-Chang

AU - Tsai, Tsung Ming

AU - Chang, Jing Shuen

AU - Huang, J. C.

PY - 2015/12

Y1 - 2015/12

N2 - We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduced, and the switching speed will be improved due to the galvanic effect. We demonstrate the galvanic effect of Au-Ag electrode by two different metal composition ratios through the material and electrical analyses.

AB - We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between Au and Ag metals, the Ag element in the Au-Ag electrode will drift into silicon oxide easily to achieve the resistive switching properties during device operation. In this letter, we found that the forming voltage of the device will be reduced, and the switching speed will be improved due to the galvanic effect. We demonstrate the galvanic effect of Au-Ag electrode by two different metal composition ratios through the material and electrical analyses.

KW - Ag-Au electrode

KW - Galvanic effect

KW - RRAM

UR - https://www.scopus.com/pages/publications/84959462914

UR - https://www.scopus.com/pages/publications/84959462914#tab=impact

U2 - 10.1109/LED.2015.2496303

DO - 10.1109/LED.2015.2496303

M3 - RGC 21 - Publication in refereed journal

SN - 0741-3106

VL - 36

SP - 1321

EP - 1324

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 7312919

ER -

Galvanic Effect of Au-Ag Electrodes for Conductive Bridging Resistive Switching Memory

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Research Keywords

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