Gallium nitride nanowires doped with silicon

Gallium nitride (GaN) is an important direct bandgap semiconductor, which is used extensively in the electronics industry. In order to exploit the applications, GaN nanowires with tailored conductivity are necessary. However, despite the need, to date no report has dealt with the doping of GaN nanowires. This paper describes the first successful synthesis of high-quality Si-doped GaN nanowires, achieved via hot-filament chemical vapor deposition (HFCVD) on Au-coated Si (100) wafers.