Further insight into the temperature quenching of photoluminescence from InAsGaAs self-assembled quantum dots

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

23 Scopus Citations
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Author(s)

  • A. Chahboun
  • M. I. Vasilevskiy
  • N. V. Baidus
  • A. Cavaco
  • N. A. Sobolev
  • And 3 others
  • M. C. Carmo
  • E. Alves
  • B. N. Zvonkov

Detail(s)

Original languageEnglish
Article number83548
Journal / PublicationJournal of Applied Physics
Volume103
Issue number8
Publication statusPublished - 2008
Externally publishedYes

Abstract

The possibility of controlling the photoluminescence (PL) intensity and its temperature dependence by means of in-growth and postgrowth technological procedures has been demonstrated for InAsGaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). The improvement of the QD emission at room temperature (RT), achieved due to a treatment with tetrachloromethane used during the growth, is explained by the reduction of the point defect concentration in the capping layer. It is shown that the PL quenching at RT appears again if the samples are irradiated with protons, above a certain dose. These findings are accounted for by the variations in the quasi-Fermi level position of the minority carriers, which are related to the concentration of trapping centers in the GaAs matrix and have been calculated using a photocarrier statistical model including both radiative and nonradiative recombination channels. By taking into consideration the temperature dependent distribution of the majority and minority carriers between the QDs, embedding QW and GaAs barriers, our calculated results for the PL intensity reproduce very well the experimentally observed trends. © 2008 American Institute of Physics.

Citation Format(s)

Further insight into the temperature quenching of photoluminescence from InAsGaAs self-assembled quantum dots. / Chahboun, A.; Vasilevskiy, M. I.; Baidus, N. V. et al.
In: Journal of Applied Physics, Vol. 103, No. 8, 83548, 2008.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review