Further considerations on the high-cycle fatigue of micron-scale polycrystalline silicon

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)931-935
Journal / PublicationScripta Materialia
Volume59
Issue number9
Online published16 Apr 2008
Publication statusPublished - Nov 2008
Externally publishedYes

Abstract

Bulk silicon is not susceptible to high-cycle fatigue but micron-scale silicon films are. Using polysilicon resonators to determine stress-lifetime fatigue behavior in several environments, oxide layers are found to show up to four-fold thickening after cycling, which is not seen after monotonic loading or after cycling in vacuo. We believe that the mechanism of thin-film silicon fatigue is "reaction-layer fatigue", involving cyclic stress-induced thickening of the oxide and moisture-assisted cracking within this layer.

Research Area(s)

  • Fatigue, MEMS, Reaction-layer fatigue, Silicon

Citation Format(s)

Further considerations on the high-cycle fatigue of micron-scale polycrystalline silicon. / Alsem, D.H.; Muhlstein, C.L.; Stach, E.A. et al.
In: Scripta Materialia, Vol. 59, No. 9, 11.2008, p. 931-935.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review