Further considerations on the high-cycle fatigue of micron-scale polycrystalline silicon
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Pages (from-to) | 931-935 |
Journal / Publication | Scripta Materialia |
Volume | 59 |
Issue number | 9 |
Online published | 16 Apr 2008 |
Publication status | Published - Nov 2008 |
Externally published | Yes |
Link(s)
Abstract
Bulk silicon is not susceptible to high-cycle fatigue but micron-scale silicon films are. Using polysilicon resonators to determine stress-lifetime fatigue behavior in several environments, oxide layers are found to show up to four-fold thickening after cycling, which is not seen after monotonic loading or after cycling in vacuo. We believe that the mechanism of thin-film silicon fatigue is "reaction-layer fatigue", involving cyclic stress-induced thickening of the oxide and moisture-assisted cracking within this layer.
Research Area(s)
- Fatigue, MEMS, Reaction-layer fatigue, Silicon
Citation Format(s)
Further considerations on the high-cycle fatigue of micron-scale polycrystalline silicon. / Alsem, D.H.; Muhlstein, C.L.; Stach, E.A. et al.
In: Scripta Materialia, Vol. 59, No. 9, 11.2008, p. 931-935.
In: Scripta Materialia, Vol. 59, No. 9, 11.2008, p. 931-935.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review