Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 483-489 |
| Journal / Publication | Materials Research Society Symposium - Proceedings |
| Volume | 339 |
| Publication status | Published - 1994 |
| Externally published | Yes |
Conference
| Title | 1994 MRS Spring Meeting |
|---|---|
| Place | United States |
| City | San Francisco, CA |
| Period | 4 - 8 April 1994 |
Link(s)
Abstract
Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.
Citation Format(s)
Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy. / Newman, N.; Fu, T. C.; Liu, X. et al.
In: Materials Research Society Symposium - Proceedings, Vol. 339, 1994, p. 483-489.
In: Materials Research Society Symposium - Proceedings, Vol. 339, 1994, p. 483-489.
Research output: Journal Publications and Reviews › RGC 22 - Publication in policy or professional journal
