Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy

N. Newman; T. C. Fu; X. Liu; Z. Liliental-Weber; M. Rubin; J. S. Chan; E. Jones; J. T. Ross; I. Tidswell; K. M. Yu; N. Cheung; E. R. Weber

doi:10.1557/proc-339-483

Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy

N. Newman, T. C. Fu, X. Liu, Z. Liliental-Weber, M. Rubin, J. S. Chan, E. Jones, J. T. Ross, I. Tidswell, K. M. Yu, N. Cheung, E. R. Weber

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Abstract

Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

Original language	English
Pages (from-to)	483-489
Journal	Materials Research Society Symposium - Proceedings
Volume	339
DOIs	https://doi.org/10.1557/proc-339-483
Publication status	Published - 1994
Externally published	Yes
Event	1994 MRS Spring Meeting - San Francisco, CA, United States Duration: 4 Apr 1994 → 8 Apr 1994 https://www.mrs.org/spring1994

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title = "Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy",

abstract = "Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.",

author = "N. Newman and Fu, {T. C.} and X. Liu and Z. Liliental-Weber and M. Rubin and Chan, {J. S.} and E. Jones and Ross, {J. T.} and I. Tidswell and Yu, {K. M.} and N. Cheung and Weber, {E. R.}",

year = "1994",

doi = "10.1557/proc-339-483",

language = "English",

volume = "339",

pages = "483--489",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

url = "https://www.mrs.org/spring1994",

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TY - JOUR

T1 - Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy

AU - Newman, N.

AU - Fu, T. C.

AU - Liu, X.

AU - Liliental-Weber, Z.

AU - Rubin, M.

AU - Chan, J. S.

AU - Jones, E.

AU - Ross, J. T.

AU - Tidswell, I.

AU - Yu, K. M.

AU - Cheung, N.

AU - Weber, E. R.

PY - 1994

Y1 - 1994

N2 - Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

AB - Gallium nitride is one of the most promising materials for ultraviolet and blue light-emitting diodes and lasers. Both Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) have recently made strong progress in fabricating high-quality epitaxial GaN thin films. In this paper, we review materials-related issues involved in MBE growth. We show that a strong understanding of the unique meta-stable growth process allows us to correctly predict the optimum conditions for epitaxial GaN growth. The resulting structural, electronic and optical properties of the GaN films are described in detail.

UR - http://www.scopus.com/inward/record.url?scp=0028750118&partnerID=8YFLogxK

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U2 - 10.1557/proc-339-483

DO - 10.1557/proc-339-483

M3 - RGC 22 - Publication in policy or professional journal

SN - 0272-9172

VL - 339

SP - 483

EP - 489

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Fundamental materials-issues involved in the growth of GaN by molecular beam epitaxy

Abstract

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