TY - JOUR
T1 - Fully Transparent Resistive Memory Employing Graphene Electrodes for Eliminating Undesired Surface Effects
AU - YANG, Po-Kang
AU - CHANG, Wen-Yuan
AU - TENG, Po-Yuan
AU - JENG, Shuo-Fang
AU - LIN, Su-Jien
AU - CHIU, Po-Wen
AU - HE, Jr-Hau
PY - 2013/7
Y1 - 2013/7
N2 - A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 102 cycles and the retention time longer than 104 s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.
AB - A ZnO-based transparent resistance random access memory (TRRAM) employs atomic layered graphene exhibiting not only excellent transparency (less than 2% absorptance by graphene) but also reversible resistive switching characteristics. The statistical analysis including cycle-to-cycle and cell-to-cell tests for almost 100 cells shows that graphene plays a significant role to suppress the surface effect, giving rise to the notable increase in the switching yield and the insensitivity to the environmental atmosphere. The resistance variation of high-resistance state of ZnO is greatly suppressed by covering graphene as well. The device reliability investigation, such as the endurance more than 102 cycles and the retention time longer than 104 s, reveals the robust passivation of graphene for TRRAM applications. The obtained insights show guidelines not only for TRRAM device design and optimization against the undesired switching parameter variations but also for developing practically useful applications of graphene.
KW - Graphene
KW - resistive switching
KW - surface effect
KW - transparent resistance random access memory (TRRAM)
UR - http://www.scopus.com/inward/record.url?scp=84879887984&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84879887984&origin=recordpage
U2 - 10.1109/JPROC.2013.2260112
DO - 10.1109/JPROC.2013.2260112
M3 - RGC 21 - Publication in refereed journal
SN - 0018-9219
VL - 101
SP - 1732
EP - 1739
JO - Proceedings of the IEEE
JF - Proceedings of the IEEE
IS - 7
M1 - 6517461
ER -