Abstract
Presented is a silicon solar cell model with fully passivated radial junction nanowire surface decoration and submerged nickel-silicide contact. Numerical simulations using a finite-difference time-domain method have been done to investigate the spectral responses of the solar cell model. The experimental results indicate that, with proper nickel-silicide thickness, the fill factor of the cell can be improved considerably without much degradation on short circuit current density. Under AM 1.5G illumination, the silicon nanowire solar cell device with 50 Å nickel-silicide contact has short circuit current density of 26.3 mA/cm2, open circuit voltage of 586 mV and fill factor of 70.0%, contributing to power conversion efficiency of 10.8%, which is 19% higher than the control device without the nickel-silicide contact. © The Institution of Engineering and Technology 2013.
| Original language | English |
|---|---|
| Pages (from-to) | 767-769 |
| Journal | Electronics Letters |
| Volume | 49 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 6 Jun 2013 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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