Fully Integrated Matching Network with Bondwire for Power Amplifier Minimization

Lok Ki Ho; Alan W. L. Ng; Wing Shing Chan; Steve W. Y. Mung

doi:10.1109/MMM.2024.3486600

Fully Integrated Matching Network with Bondwire for Power Amplifier Minimization

Lok Ki Ho, Alan W. L. Ng, Wing Shing Chan, Steve W. Y. Mung

Department of Electrical Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1 Citation (Scopus)

Abstract

This article explores the advancement of wireless communication focusing on the development of high-performance front-end circuits in mature 5G and beyond mobile technologies. It investigates the design of power amplifiers (PAs) and the need for miniaturization because of the rising demand for high data rate applications. The article demonstrates the utilization of bondwires for the fully integrated matching network in PAs to achieve size reduction of the die and package. The use of gallium nitride-based transistors and high-electron-mobility transistors for fully integrated PAs is examined. © 2025 IEEE.

Original language	English
Pages (from-to)	84-92
Journal	IEEE Microwave Magazine
Volume	26
Issue number	2
Online published	10 Jan 2025
DOIs	https://doi.org/10.1109/MMM.2024.3486600
Publication status	Published - Feb 2025

Funding

This work was supported by the Research Matching Grant Scheme (RMGS) from the Research Grants Council of the Hong Kong Special Administrative Region, China.

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abstract = "This article explores the advancement of wireless communication focusing on the development of high-performance front-end circuits in mature 5G and beyond mobile technologies. It investigates the design of power amplifiers (PAs) and the need for miniaturization because of the rising demand for high data rate applications. The article demonstrates the utilization of bondwires for the fully integrated matching network in PAs to achieve size reduction of the die and package. The use of gallium nitride-based transistors and high-electron-mobility transistors for fully integrated PAs is examined. {\textcopyright} 2025 IEEE.",

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AB - This article explores the advancement of wireless communication focusing on the development of high-performance front-end circuits in mature 5G and beyond mobile technologies. It investigates the design of power amplifiers (PAs) and the need for miniaturization because of the rising demand for high data rate applications. The article demonstrates the utilization of bondwires for the fully integrated matching network in PAs to achieve size reduction of the die and package. The use of gallium nitride-based transistors and high-electron-mobility transistors for fully integrated PAs is examined. © 2025 IEEE.

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Fully Integrated Matching Network with Bondwire for Power Amplifier Minimization

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