From Si nanotubes to nanowires: Synthesis, characterization, and self-assembly

T. Qiu, X. L. Wu, Y. F. Mei, G. J. Wan, Paul K. Chu, G. G. Siu

    Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

    73 Citations (Scopus)

    Abstract

    Through electroless silver deposition, we have successfully fabricated Si nanowires (SiNWs) in a conventional vessel containing aqueous HF and AgNO 3 solution. Their growth mechanisms are analyzed on the basis of a self-assembled localized microscopic electrochemical cell model. A series of scanning electron microscope observations reveal the detailed growth process of the SiNWs. The formation of intermediate Si nanostructures (undetached Si nanotubes) is suggested to be responsible for the growth of triangular shaped SiNWs. The shape and structure of the SiNWs and intermediate undetached Si nanotubes are promising characteristics for applications in interconnection and basic components for future nanoelectronic and optoelectronic devices. © 2005 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)143-148
    JournalJournal of Crystal Growth
    Volume277
    Issue number1-4
    DOIs
    Publication statusPublished - 15 Apr 2005

    Research Keywords

    • A1. Nanostructures
    • A2. Electrochemical growth
    • B2. Semiconducting silicon

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